Effect of SiO2 addition on the microstructure and electrical properties of ZnO-based varistors

International Journal of Minerals, Metallurgy and Materials

Volumn 17, Issue 1, 2010, Pages 86-91

  Wu, Zhen Hong ^a   Fang, Jian Hui ^a   Xu, Dong ^a   Zhong, Qin Dong ^a   Shi, Li Yi ^a  

^a SHANGHAI UNIVERSITY   (China)

Author keywords

Electrical properties; Inorganic materials; Silicon dioxide; Varistor

Indexed keywords

AVERAGE GRAIN SIZE; ELECTRIC MEASUREMENTS; ELECTRICAL PROPERTY; ENERGY DISPERSIVE X-RAY; GLASS PHASE; INDUCTIVELY COUPLED PLASMA-ATOMIC EMISSION SPECTROMETRY; INORGANIC MATERIALS; MAXIMUM VALUES; MINIMUM VALUE; NONLINEAR COEFFICIENT; NONLINEAR PROPERTIES; SECOND PHASE; SILICON DIOXIDE; SOLID REACTIONS; VARISTOR VOLTAGE; ZNO;

ATOMIC SPECTROSCOPY; ELECTRIC VARIABLES MEASUREMENT; ELECTROMAGNETIC INDUCTION; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; INDUCTIVELY COUPLED PLASMA; MATERIALS PROPERTIES; MICROSTRUCTURE; SCANNING ELECTRON MICROSCOPY; SILICA; SILICON OXIDES; SPECTROMETRY; VARISTORS; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC; ZINC OXIDE;

ELECTRIC PROPERTIES;

EID: 77950961725     PISSN: 16744799     EISSN: 1869103X     Source Type: Journal    
DOI: 10.1007/s12613-010-0115-0     Document Type: Article

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