Investigation of the epitaxial graphene/p-SiC heterojunction

IEEE Electron Device Letters

Volumn 33, Issue 11, 2012, Pages 1610-1612

  Anderson, T J ^a   Hobart, K D ^a   Nyakiti, L O ^a   Wheeler, V D ^a   Myers Ward, R L ^a   Caldwell, J D ^a   Bezares, F J ^a   Jernigan, G G ^a   Tadjer, M J ^b   Imhoff, E A ^a   Koehler, A D ^a   Gaskill, D K ^a   Eddy, C R ^a   Kub, F J ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

^b UNIVERSIDAD COMPLUTENSE DE MADRID   (Spain)

Author keywords

Graphene; heterojunction; semiconductor (SiC)

Indexed keywords

BAND EDGE; CHARGE-CARRIER TRANSPORT; EPITAXIAL GRAPHENE; I - V CURVE; I-V BEHAVIOR; SCHOTTKY BARRIERS; SEMICONDUCTOR HETEROJUNCTIONS; TEMPERATURE DEPENDENT;

CURVE FITTING; ELECTRIC PROPERTIES; EPITAXIAL GROWTH; GRAPHENE; SCHOTTKY BARRIER DIODES; SILICON CARBIDE; THERMIONIC EMISSION;

HETEROJUNCTIONS;

EID: 84867901441     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2211562     Document Type: Article

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