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Volumn 102, Issue , 2013, Pages 82-85

Purification of metallurgical grade silicon by a microwave-assisted plasma process

Author keywords

Impurity concentrations; Metallurgical grade silicon; Microwave; Plasma; Purification

Indexed keywords

ICP-AES; IMPURITIES IN; IMPURITY ATOMS; IMPURITY CONCENTRATION; INDUCTIVELY COUPLED PLASMA-ATOMIC EMISSION SPECTROMETRY; METALLURGICAL GRADE SILICONS (MGSI); MICROWAVE PLASMA; MICROWAVE-ASSISTED; PHOTORESPONSES; PLASMA PROCESS; REMOVAL RATE; SI WAFER; SWITCHING BEHAVIORS; ULTRA-HIGH; UNDERLYING MECHANISM;

EID: 84867803733     PISSN: 13835866     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.seppur.2012.09.035     Document Type: Article
Times cited : (33)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.