Antiferromagnetic heusler Ru 2 MnGe epitaxial thin films showing néel temperatures up to 353 K

IEEE Transactions on Magnetics

Volumn 48, Issue 11, 2012, Pages 3211-3214

  Fukatani, N ^a   Fujita, H ^a   Miyawaki, T ^a   Ueda, K ^a   Asano, H ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

Antiferromagnetic materials; N el temperature; Ru 2MnGe; strain effect

Indexed keywords

ANTIFERROMAGNETIC TRANSITION TEMPERATURE; ANTIFERROMAGNETICS; BULK MATERIALS; BULK VALUE; ELECTRICAL TRANSPORT PROPERTIES; EPITAXIAL THIN FILMS; HEUSLER; IN-PLANE COMPRESSIVE STRAIN; MAGNETIC INTERACTIONS; MGO; MGO SUBSTRATE; OSCILLATING BEHAVIOR; STRAIN EFFECT;

ANTIFERROMAGNETIC MATERIALS; ANTIFERROMAGNETISM; ELECTRIC PROPERTIES; MANGANESE; THIN FILMS; TRANSPORT PROPERTIES;

RUTHENIUM ALLOYS;

EID: 84867775836     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2012.2198874     Document Type: Article

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