Grain growth effect of Cr 2O 3 thin film layer on exchange coupling of Cr 2O 3/Co interface

IEEE Transactions on Magnetics

Volumn 48, Issue 11, 2012, Pages 4359-4362

  Nozaki, T ^a   Shimomura, N ^a   Ashida, T ^a   Sato, Y ^a   Sahashi, M ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

Coercivity; Cr 2O 3; Exchange bias; Magnetoelectric materials

Indexed keywords

EXCHANGE BIAS; GROWTH EFFECTS; MAGNETIZATION AXIS; MAGNETOELECTRIC MATERIALS; NEAR ROOM TEMPERATURE; OUT-OF-PLANE DIRECTION; PERPENDICULAR EXCHANGE BIAS; POLYCRYSTALLINE; RANDOM ORIENTATIONS; SPIN DIRECTION; TEMPERATURE DEPENDENT; THIN FILM LAYERS;

COERCIVE FORCE;

EID: 84867774649     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2012.2195718     Document Type: Article

References (8)

1. X. Chen, A. Hochstrat, P. Borisov, and W. Kleemann, "Magnetoelectric exchange bias systems in spintronics," Appl. Phys. Lett., vol. 89, pp. 202508-1-202508-3, 2006.
2. 3," Phys. Rev. Lett., vol. 6, pp. 607-608, 1961.
3. 3 (0001) thin film," J. Magn. Magn. Mater., vol. 323, pp. 579-586, 2010.
4. X. He, N. Wu, A. N. Caruso, E. Vescovo, K. D. Bekashchenko, P. A. Dowben, and C. Binek, "Robust isothermal electric control of exchange bias at room temperature," Nat. Mater., vol. 9, pp. 579-585, 2010.
5. 3," J. Appl. Phys., vol. 110, pp. 033917-1-033917-8, 2011.
6. 3 bilayers with the antiferromagnetic spin configuration," Phys. Rev. B, vol. 72, pp. 224421-1-224421-8, 2005.
7. 3 (0001) thin film," Appl. Phys. Express, vol. 3, pp. 113001-1-113001-3, 2010.
8. 3," Surf. Coat. Tech., vol. 201, pp. 4205-4208, 2006. (Pubitemid 44783156)