SCOPUS 정보 검색 플랫폼

Transactions on Electrical and Electronic Materials

Volumn 13, Issue 4, 2012, Pages 171-176

Crystal structure and piezoelectric properties of four component langasite A 3B Ga 3Si 2O 14 (A = Ca or Sr, B = Ta or Nb)

(3) Ohsato, Hitoshi a,b,c Iwataki, Tsuyoshi c Morikoshi, Hiroki d

a Hoseo University (South Korea)

b NAGOYA INDUSTRIAL SCIENCE RESEARCH INSTITUTE (Japan)

c NAGOYA INSTITUTE OF TECHNOLOGY (Japan)

d TDK CORPORATION (Japan)

Author keywords

Crystal structure analysis by single crystals; Four compound langasite (Ca Sr) 3(La Nd)Ga 3Si 2O 14; Framework structure of langasite; High temperature performance; Mechanism of piezoelectricity

Indexed keywords

CRYSTAL STRUCTURE ANALYSIS; DIGITAL TRANSFORMATION; ELECTRO MECHANICAL COUPLING FACTORS; HIGH TEMPERATURE PERFORMANCE; IONIC RADIUS; LANGASITES; PIEZOELECTRIC CONSTANT; PIEZOELECTRIC PROPERTY; SA WFILTER; SINGLE CRYSTAL X-RAY DIFFRACTION; TEMPERATURE STABILITY;

EID: 84867617165 PISSN: 12297607 EISSN: 20927592 Source Type: Journal
DOI: 10.4313/TEEM.2012.13.4.171 Document Type: Article

Times cited : (20)

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