Czochralski growth of RE3Ga5SiO14 (RE = La, Pr, Nd) single crystals for the analysis of the influence of rare earth substitution on piezoelectricity

Journal of Crystal Growth

Volumn 191, Issue 4, 1998, Pages 746-753

  Sato, J ^a   Takeda, H ^a   Morikoshi, H ^b   Shimamura, K ^a   Rudolph, P ^a,c   Fukuda, T ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b TDK CORPORATION   (Japan)

^c LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

Author keywords

Czochralski growth; Gallates; Piezoelectricity; Rare earth substitution; Transmittance

Indexed keywords

LANTHANUM; LATTICE CONSTANTS; NEODYMIUM; PIEZOELECTRICITY; PRASEODYMIUM; SEMICONDUCTING GALLIUM COMPOUNDS; SINGLE CRYSTALS; X RAY CRYSTALLOGRAPHY;

GALLATES; PIEZOELECTRIC STRAIN;

CRYSTAL GROWTH FROM MELT;

EID: 0032137430     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00362-5     Document Type: Article

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