Enhanced piezoelectric and antiferroelectric properties of high-T C perovskite of Zr-substituted Bi(Mg 1/2Ti 1/2)O 3-PbTiO 3

Journal of Applied Physics

Volumn 112, Issue 7, 2012, Pages

  Chen, Jun ^a   Li, Jianyong ^a   Fan, Longlong ^a   Zou, Ning ^a   Ji, Pengfei ^a   Liu, Laijun ^b   Fang, Liang ^b   Kang, Huajun ^a   Xing, Xianran ^a  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY BEIJING   (China)

^b GUILIN UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANTI FERROELECTRICS; ANTIFERROELECTRIC PROPERTIES; BI-BASED PEROVSKITE; COERCIVE FIELD; DEPOLING; HIGH TEMPERATURE; HIGH-T; MORPHOTROPIC PHASE BOUNDARIES; PIEZOELECTRIC PROPERTY; PIEZOELECTRICS; RELAXORS; RHOMBOHEDRAL PHASE; TETRAGONAL PHASE; TETRAGONALITY;

ANTIFERROELECTRICITY; FERROELECTRIC MATERIALS; FERROELECTRICITY; HIGH TEMPERATURE APPLICATIONS; PEROVSKITE; PIEZOELECTRICITY;

ZIRCONIUM;

EID: 84867549605     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4755790     Document Type: Article

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