Terahertz emission from cubic semiconductor induced by a transient anisotropic photocurrent

Journal of Applied Physics

Volumn 112, Issue 7, 2012, Pages

  Malevich, V L ^a   Ziaziulia, P A ^b   Adomavicius R ^c   Krotkus, A ^c   Malevich, Y V ^c  

^a B I STEPANOV INSTITUTE OF PHYSICS   (Belarus)

^b BELARUSIAN STATE UNIVERSITY   (Belarus)

^c CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY   (Lithuania)

Author keywords

[No Author keywords available]

Indexed keywords

AZIMUTHAL ANISOTROPY; CRYSTALLOGRAPHIC AXES; CUBIC SYMMETRY; DC ELECTRIC FIELD; DISPERSION LAW; FEMTOSECONDS; INAS; INTERBAND; NARROW-GAP SEMICONDUCTORS; NON PARABOLICITY; OPTICAL ALIGNMENTS; OPTICAL FIELD; PHOTOEXCITED CARRIERS; PHOTON ENERGY; TERAHERTZ EMISSIONS; TERAHERTZ PULSE; TERAHERTZ RADIATION; TRANSIENT PHOTOCURRENTS;

ELECTRIC FIELDS; INDIUM ARSENIDE; LASER PULSES; PHOTOEXCITATION; SEMICONDUCTING GALLIUM ARSENIDE;

ANISOTROPY;

EID: 84867542408     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4758181     Document Type: Article

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