Optimization of processing parameters of the chemical vapor deposition process for synthesizing high-quality single-walled carbon nanotube fluff and roving

Composites Science and Technology

Volumn 72, Issue 15, 2012, Pages 1855-1862

  Tai, N H ^a   Chen, H M ^a   Chen, Y J ^a   Hsieh, P Y ^a   Liang, J R ^a   Chou, T W ^b  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b UNIVERSITY OF DELAWARE   (United States)

Author keywords

A. Carbon nanotubes; E. Chemical vapor deposition (CVD)

Indexed keywords

CARBON NANOTUBE FILMS; CHAMBER PRESSURE; CHEMICAL VAPOR DEPOSITION PROCESS; CHEMICAL VAPOR DEPOSITION REACTORS; E. CHEMICAL VAPOR DEPOSITIONS; ENTANGLED NETWORKS; EVAPORATION TEMPERATURE; FERROCENES; FIELD EMISSION SCANNING ELECTRON MICROSCOPY; HIGH QUALITY; LOW-INTENSITY; OPTIMAL PARAMETER; OPTIMAL PROCESSING; PROCESSING PARAMETERS; REACTOR TEMPERATURES; SYNTHESIS MECHANISM;

IRON COMPOUNDS; OPTIMIZATION; ORGANOMETALLICS; RAMAN SPECTROSCOPY; SINGLE-WALLED CARBON NANOTUBES (SWCN); TAGUCHI METHODS; TRANSMISSION ELECTRON MICROSCOPY; VAPORS;

CHEMICAL VAPOR DEPOSITION;

EID: 84867317894     PISSN: 02663538     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.compscitech.2012.07.019     Document Type: Article

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