The understanding of the memory nature and mechanism of the Ta 2O5-gate-dielectric-based organic phototransistor memory

Organic Electronics

Volumn 13, Issue 12, 2012, Pages 2917-2923

  Liu, Xiaohui ^a   Dong, Guifang ^a   Zhao, Dan ^b   Wang, Yapei ^b   Duan, Lian ^a   Wang, Liduo ^a   Qiu, Yong ^a  

^a TSINGHUA UNIVERSITY   (China)

^b RENMIN UNIVERSITY OF CHINA   (China)

Author keywords

Memory mechanism; Memory window; Organic phototransistor memory; Retention time

Indexed keywords

DIELECTRIC MATERIALS; ELECTRON INJECTION; ELECTRON TRAPS; ELECTRONS; GATE DIELECTRICS; INTERFACES (MATERIALS); PHOTOTRANSISTORS; POLYMETHYL METHACRYLATES; TANTALUM OXIDES; ULTRAVIOLET SPECTROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

ELECTRON TRAPPING PROCESS; ENERGY LEVEL ALIGNMENT; KELVIN PROBE FORCE MICROSCOPY; MEMORY MECHANISM; MEMORY WINDOW; ORGANIC PHOTOTRANSISTORS; RETENTION TIME; UV-VIS ABSORPTION SPECTRA;

HIGH-K DIELECTRIC;

EID: 84867237494     PISSN: 15661199     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.orgel.2012.09.011     Document Type: Article

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