Investigation of defect levels in Cs 2Hg 6S 7 single crystals by photoconductivity and photoluminescence spectroscopies

Journal of Applied Physics

Volumn 112, Issue 6, 2012, Pages

  Peters, J A ^a   Cho, Nam Ki ^a   Liu, Zhifu ^a   Wessels, B W ^a,b   Li, Hao ^a   Androulakis, J ^a   Kanatzidis, M G ^a  

^a NORTHWESTERN UNIVERSITY   (United States)

^b Northwestern University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACCEPTOR LEVELS; BAND EDGE; DEFECT LEVELS; DEFECT-RELATED EMISSION; ELECTRICALLY ACTIVE DEFECTS; GAMMA-RAY DETECTION; HEAVY ELEMENTS; ILLUMINATION INTENSITY; IONIZED ACCEPTOR; LOW TEMPERATURES; METAL VACANCIES; NEAR BAND EDGE; PEAK INTENSITY; RADIATIVE RECOMBINATION; RECOMBINATION CENTERS; RECOMBINATION PROCESS; SEMICONDUCTOR COMPOUNDS; SHALLOW TRAPS; SUPERLINEAR; TEMPERATURE RANGE; WIDE-GAP SEMICONDUCTOR;

CESIUM; CHEMICAL ELEMENTS; GAMMA RAYS; MERCURY (METAL); PHOTOCONDUCTIVITY; PHOTOLUMINESCENCE SPECTROSCOPY;

DEFECTS;

EID: 84867047822     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4750982     Document Type: Article

References (27)

1. A. Owens and A. Peacock, Nucl. Instrum. Methods Phys. Res. 531, 18 (2004). 10.1016/j.nima.2004.05.071
2. E. A. Axtell, Y. Park, K. Chondroudis, and M. G. Kanatzidis, J. Amer. Chem. Soc. 120, 124 (1998); 10.1021/ja9713486
3. I. Androulakis, Adv. Mater. 23, 4163 (2011); 10.1002/adma.201102450
4. H. Li, J. A. Peters, Z. F. Uu, M. Sebastian, C. D. Maiilakas, J. Androuiakls, L. D. Zhao, I. Chung, S. L. Nguyen, S. Johnsen, B. W. Wessels, and M. G. Kanatzidis, Cryst. Growth Des. 12, 3250 (2012). 10.1021/cg300385s
5. I. Androulakis, Mater. Res. Symp. Proc. 1341, 87 (2011); 10.1557/opl.2011.1273
6. M. G. Kanatzidis and Y. Park, Chem. Mater. 2, 99 (1990). 10.1021/cm00008a006
7. J. A. Peters, Mater. Res. Symp. Proc. 1341, 133 (2011). 10.1557/opl.2011.1482
8. P. Lange, H. Neff, M. Fearheiley, and K. J. Bachmann, Phys. Rev. B 31, 4074 (1985). 10.1103/PhysRevB.31.4074
9. E. Saucedo, J. Appl. Phys. 100, 104901 (2006). 10.1063/1.2382668
10. I. Uchida, J. Phy. Soc. Jpn. 22, 770 (1967). 10.1143/JPSJ.22.770
11. R. H. Bube, Electronic Properties of Crystalline Solids (Academic, New York, 1974).
12. W. Scott, J. Appl. Phys. 50, 472 (1979). 10.1063/1.325636
13. H. J. Stocker and H. Kaplan, Phys. Rev. 150, 619 (1966). 10.1103/PhysRev.150.619
14. H. Jin, J. Im, A. J. Freeman, B. Wessels, and M. Kanatzidis, First-principles study of γ-ray detectors: Cs-based compounds., in American Physical Society (APS) March Meeting, Boston, MA, 2012.
15. R. H. Bube, Photoelectronic Properties of Semiconductors (Cambridge University Press, Cambridge, 1992), pp. 59, 72, 83.
16. A. F. Qasrawi and N. M. Gasanly, J. Phys.: Condens. Matter 21, 115801 (2009). 10.1088/0953-8984/21/11/115801
17. A. F. Qasrawi and N. M. Gasanly, J. Phys.: Condens. Matter 18, 4609 (2006). 10.1088/0953-8984/18/19/014
18. R. K. Pal, K. Ji, A. K. Agnihotri, C. P. Singh, S. Yadav, and A. Kumar, Chalcogenide Lett. 6, 29 (2009).
19. O. Karabulut, M. Parlak, and G. M. Mamedov, J. Alloys Compd. 429, 50 (2007). 10.1016/j.jallcom.2006.04.010
20. D. Pines and P. Nozieres, The Theory of Quantum Liquids (Benjamin, New York, 1966).
21. R. H. Bube, Photoconductivity of Solids (Krieger, Huntington, New York, 1978), pp. 342-348.
22. J. Krustok, H. Collan, and K. Hjelt, J. Appl. Phys. 81, 1442 (1996). 10.1063/1.363903
23. I. Vurgaftman, J. R. Meyer, and L. R. Ram-Mohan, J. Appl. Phys. 89, 5815 (2001). 10.1063/1.1368156
24. V. A. Fonoberov, Phys. Rev. B 73, 165317 (2006). 10.1103/PhysRevB.73. 165317
25. A. A. Klochikhin, Phys. Rev. B 71, 195207 (2005). 10.1103/PhysRevB.71. 195207
26. A. N. Georgobiani, S. J. Radautsan, and I. M. Tiginyanu, Sov. Phys. Semicond. 19, 121 (1985).
27. S. J. Radautsan, I. M. Tiginyanu, V. N. Fulga, and Yu. O. Derid, Phys. Status Solidi A 114, 259 (1989). 10.1002/pssa.2211140125