Temperature- and photo-excitation effects on the electrical properties of Tl4Se3S crystals

Journal of Physics Condensed Matter

Volumn 21, Issue 11, 2009, Pages

  Qasrawi, A F ^a,b   Gasanly, N M ^c  

^a ATILIM UNIVERSITY   (Turkey)

^b ARAB AMERICAN UNIVERSITY   (Palestine)

^c MIDDLE EAST TECHNICAL UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL PROPERTIES; ELECTRICAL RESISTIVITIES; ENERGY STATE; ILLUMINATION INTENSITIES; IMPURITY LEVELS; MONOMOLECULAR RECOMBINATIONS; PHOTO EXCITATIONS; PHOTOELECTRICAL MEASUREMENTS; RECOMBINATION MECHANISMS; ROOM TEMPERATURES; TEMPERATURE DECREASE; TEMPERATURE RANGES; TRAPPING CENTERS;

ACTIVATION ENERGY; CRYSTALS; ELECTRIC PROPERTIES; ELECTRIC RESISTANCE; PHOTOCURRENTS;

CRYSTAL IMPURITIES;

EID: 65549128305     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/21/11/115801     Document Type: Article

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