Erratum: Anomalous time relaxation of the nonvolatile resistive state in bipolar resistive-switching oxide-based memories (Physical Review B (2012) 86 (104426) DOI:10.1103/PhysRevB.86.104426);Anomalous time relaxation of the nonvolatile resistive state in bipolar resistive-switching oxide-based memories

Physical Review B - Condensed Matter and Materials Physics

Volumn 86, Issue 10, 2012, Pages

  Schulman, A ^a   Rozenberg, M J ^a,b   Acha, C ^a  

^a UNIVERSIDAD DE BUENOS AIRES   (Argentina)

^b UNIVERSITÉ PARIS SUD   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84866872273     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.86.099902     Document Type: Erratum

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