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IEEE MTT-S International Microwave Symposium Digest

Volumn , Issue , 2012, Pages

92-96 GHz GaN power amplifiers

(15) Micovic, M a Kurdoghlian, A a Margomenos, A a Brown, D F a Shinohara, K a Burnham, S a Milosavljevic, I a Bowen, R a Williams, A J a Hashimoto, P a Grabar, R a Butler, C a Schmitz, A a Willadsen, P J a Chow, D H a

a Hughes Aircraft Co (United States)

Author keywords

Gallium nitride; Millimeter wave integrated circuits; Power amplifiers

Indexed keywords

GAN POWER AMPLIFIER; GATE PERIPHERY; HIGH-POWER; MILLIMETER-WAVE INTEGRATED CIRCUITS; ON CHIPS; OUTPUT POWER; POWER COMBINING; SINGLE CHIPS; SOLID STATE POWER AMPLIFIER;

GALLIUM NITRIDE;

POWER AMPLIFIERS;

EID: 84866672614 PISSN: 0149645X EISSN: None Source Type: Conference Proceeding
DOI: 10.1109/MWSYM.2012.6259572 Document Type: Conference Paper

Times cited : (96)

References (5)

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- A. Brown, K. Brown, J. Chen, K.c. Hwang, N. Kolias and R. Scott, "W-Band GaN Power Amplifier MMIC," IEEE IMS, June 2011
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2
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- E-Band 85-mW Oscillator and I.3W Amplifier IC's using 0.12-llm GaN HEMTs for Millimeter-wave Transceivers
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- Y. Nakasha, S. Masuda, K. Makiyama, T. Ohki, M. Kanamura, N. Okamoto, T. Tajima, T. Seino, K. Imanishi, T. Kikkawa and N. Hara, "E-Band 85-mW Oscillator and I.3W Amplifier IC's using 0.12-llm GaN HEMTs for Millimeter-wave Transceivers," IEEE CSIC Symposium, October 2010
- (2010) IEEE CSIC Symposium
- Nakasha, Y.¹ Masuda, S.² Makiyama, K.³ Ohki, T.⁴ Kanamura, M.⁵ Okamoto, N.⁶ Tajima, T.⁷ Seino, T.⁸ Imanishi, K.⁹ Kikkawa, T.¹⁰ Hara, N.¹¹

3
- 46049092224
- GaN HFET for W-band Power Applications
- December
- M. Micovic, A. Kurdoghlian, P. Hashimoto, M. Hu, M. Antcliffe, P. Willadsen, W. Wong, R. Bowen, l. Milosavljevic, A. Schmitz, M. Wetzel, D. H. Chow "GaN HFET for W-band Power Applications", IEEE IEDM Dig., December 2006
- (2006) IEEE IEDM Dig.
- Micovic, M.¹ Kurdoghlian, A.² Hashimoto, P.³ Hu, M.⁴ Antcliffe, M.⁵ Willadsen, P.⁶ Wong, W.⁷ Bowen, R.⁸ Milosavljevic, L.⁹ Schmitz, A.¹⁰ Wetzel, M.¹¹ Chow, D.H.¹²

4
- 84866785732
- W-band GaN MMIC with 842 mW output power at 88 GHz
- M. Micovic, A. Kurdoghlian, K. Shinohara, S. Burnham, I. Milosavljevic, M. Hu, A. Corrion, A. Fung, R. Lin, L. Samoska, P. Kangaslathti, B. Lambrigtsen, P. Goldsmith, W.Wong, A. Schmitz, P. Hashimoto, P. Willadsen, and D. H. Chow "W-Band GaN MMIC with 842 mW Output Power at 88 GHz", IEEE IMS, 2010
- (2010) IEEE IMS
- Micovic, M.¹ Kurdoghlian, A.² Shinohara, K.³ Burnham, S.⁴ Milosavljevic, I.⁵ Hu, M.⁶ Corrion, A.⁷ Fung, A.⁸ Lin, R.⁹ Samoska, L.¹⁰ Kangaslathti, P.¹¹ Lambrigtsen, B.¹² Goldsmith, P.¹³ Wong, W.¹⁴ Schmitz, A.¹⁵ Hashimoto, P.¹⁶ Willadsen, P.¹⁷ Chow, D.H.¹⁸

5
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- W-band power performance of AIGaN/GaN DHFETs with regrown n+ GaN ohmic cointacts by MBE
- December
- D.F. Brown, A. Williams, K. Shinohara, A. Kurdoghlian., l. Milosavljevic, P. Hashimoto, R. Grabar, S. Burnham, C. Butler, P. Willadsen, and M. Micovic "W-Band Power Performance of AIGaN/GaN DHFETs with Regrown n+ GaN Ohmic Cointacts by MBE", IEEE IEDM Dig., December 2011
- (2011) IEEE IEDM Dig.
- Brown, D.F.¹ Williams, A.² Shinohara, K.³ Kurdoghlian, A.⁴ Milosavljevic, L.⁵ Hashimoto, P.⁶ Grabar, R.⁷ Burnham, S.⁸ Butler, C.⁹ Willadsen, P.¹⁰ Micovic, M.¹¹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.