Single-step fabrication of luminescent GaAs nanocrystals by pulsed laser ablation in liquids

Optical Materials Express

Volumn 2, Issue 6, 2012, Pages 799-813

  Salminen, Turkka ^a   Dahl, Johnny ^b   Tuominen, Marjukka ^b   Laukkanen, Pekka ^b   Arola, Eero ^a   Niemi, Tapio ^a  

^a TAMPERE UNIVERSITY OF TECHNOLOGY   (Finland)

^b UNIVERSITY OF TURKU   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

BOHR EXCITON RADIUS; CHEMICAL SURFACES; GAAS; OPTICAL ABSORPTION AND EMISSION; OXIDIZATION; PHOTOLUMINESCENCE PROPERTIES; SINGLE-STEP; SURFACE PASSIVATION; THERMAL-ANNEALING; VISIBLE SPECTRA;

EXCITONS; GALLIUM ARSENIDE; OPTICAL PROPERTIES; PHOTOELECTRONS; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY; SEMICONDUCTING GALLIUM; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

NANOCRYSTALS;

EID: 84866540618     PISSN: None     EISSN: 21593930     Source Type: Journal    
DOI: 10.1364/OME.2.000799     Document Type: Article

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