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Volumn 20, Issue 105, 2012, Pages A754-A764

Theoretical performance of multi-junction solar cells combining III-V and Si materials

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM GALLIUM ARSENIDE; COMPUTER SIMULATION; EFFICIENCY; NANOSTRUCTURED MATERIALS; SEMICONDUCTING INDIUM; SOLAR CELLS;

EID: 84866248427     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.20.00A754     Document Type: Article
Times cited : (34)

References (25)
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  • 3
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  • 6
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    • GaP nucleation on exact Si (0 0 1) substrates for III/V device integration
    • K. Volz, A. Beyer, W. Witte, J. Ohlmann, I. Nemeth, B. Kunert, and W. Stolz, “GaP nucleation on exact Si (0 0 1) substrates for III/V device integration,” J. Cryst. Growth 315(1), 37-47 (2011).
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    • Shockley, W.1    Queisser, H.J.2
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    • Modeling of two-junction, series connected tandem solar cells using topcell thickness as an adjustable parameter
    • S. R. Kurtz, P. Faine, and J. M. Olson, “Modeling of two-junction, series connected tandem solar cells using topcell thickness as an adjustable parameter,” J. Appl. Phys. 68(4), 1890-1895 (1990).
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    • Kurtz, S.R.1    Faine, P.2    Olson, J.M.3
  • 13
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    • Modeling of InGaN/Si tandem solar cells
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.