The stability of illuminated p-GaInP2 semiconductor photoelectrode

International Journal of Hydrogen Energy

Volumn 37, Issue 19, 2012, Pages 14009-14014

  Wang, Heli ^a   Deutsch, Todd ^a   Welch, Adam ^a   Turner, John A ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

GaInP2; Photoelectrochemistry; SEM; Stability; XPS

Indexed keywords

AS-GROWN; CORROSION INHIBITION; DEPTH PROFILE; GAINP; ICP ANALYSIS; INHIBITING EFFECT; PHOTO-ELECTROCHEMISTRY; SELECTIVE DISSOLUTION; SEMI-CONDUCTOR SURFACES; SEMICONDUCTOR PHOTOELECTRODE;

CONVERGENCE OF NUMERICAL METHODS; DISSOLUTION; SCANNING ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

CORROSION;

EID: 84866136721     PISSN: 03603199     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ijhydene.2012.07.052     Document Type: Article

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