Cationic point defects in CuGaSe 2 from a structural perspective

Applied Physics Letters

Volumn 101, Issue 10, 2012, Pages

  Stephan, C ^a   Scherb, T ^a   Kaufmann, C A ^a   Schorr, S ^a   Schock, H W ^a  

^a HAHN MEITNER INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHALCOPYRITE SEMICONDUCTOR; CU-POOR; INTERSTITIAL SITES; MATERIAL PROPERTY; STRUCTURAL INHOMOGENEITIES; WIDE-GAP SEMICONDUCTOR;

COPPER COMPOUNDS; GALLIUM; STOICHIOMETRY;

POINT DEFECTS;

EID: 84866049068     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4751338     Document Type: Review

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