Mott insulators in strong electric fields

Physical Review B - Condensed Matter and Materials Physics

Volumn 66, Issue 7, 2002, Pages 1-16

  Sachdev, Subir ^a   Sengupta, K ^a   Girvin, S M ^a  

^a Yale University   (United States)

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Indexed keywords

EID: 84865856442     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.66.075128     Document Type: Article

References (22)

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5. If we ignore the spin of the fermions (as may be the justified under certain physical conditions, such as the presence of a magnetic field), then the generalization of our results to fermionic Mott insulators (which must have (formula presented) is relatively straightforward. The (formula presented) results apply unchanged to fermionic Mott insulators. For (formula presented) the Hamiltonian (formula presented) in Eq. (1.18) applies unchanged, but with p and h fermionic operators. The first two constraints in Eq. (1.16) are now automatically accounted for by fermionic statistics, while the last must be implemented by an infinite local repulsion between quasiparticles and quasiholes. Gapped phases appear for large (formula presented) (the region with (formula presented) having Ising density wave order), but the particle-hole hopping asymmetry allows this fermionic model to exhibit gapless Fermi surfaces for motion in the transverse direction. The case of spinful fermions will have an even richer behavior, driven by the antiferromagnetic coupling between the spins.
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