Photophysics of single silicon vacancy centers in diamond: Implications for single photon emission

Optics Express

Volumn 20, Issue 18, 2012, Pages 19956-19971

  Neu, Elke ^a   Agio, Mario ^b   Becher, Christoph ^a  

^a SAARLAND UNIVERSITY   (Germany)

^b ISTITUTO NAZIONALE DI OTTICA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

COLOR CENTERS; IRIDIUM;

COLLECTION EFFICIENCY; DIAMOND NANOCRYSTALS; HIGH BRIGHTNESS; INTENSITY-DEPENDENT; IRIDIUM SURFACES; NARROW BANDWIDTH; PHOTOPHYSICS; ROOM TEMPERATURE; SINGLE PHOTON EMISSION; SINGLE PHOTONS;

LUMINANCE;

DIAMOND; SILICON;

ARTICLE; CHEMICAL MODEL; CHEMISTRY; COMPUTER SIMULATION; LIGHT; PHOTON; RADIATION SCATTERING;

COMPUTER SIMULATION; DIAMOND; LIGHT; MODELS, CHEMICAL; PHOTONS; SCATTERING, RADIATION; SILICON;

EID: 84865746120     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.20.019956     Document Type: Article

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