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Volumn 85, Issue 24, 2012, Pages

Electronic transitions of single silicon vacancy centers in the near-infrared spectral region

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[No Author keywords available]

Indexed keywords


EID: 84863315290     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.85.245207     Document Type: Article
Times cited : (32)

References (36)
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.