SiliconPV 2012 generation of defect-related acceptor states by laser doping

Solar Energy Materials and Solar Cells

Volumn 106, Issue , 2012, Pages 2-6

  Safiei, Ali ^a   Derix, Robert ^b   Suckow, Stephan ^a   Koch, Holger ^a   Breuer, Uwe ^c   Pletzer, Tobias M ^a   Wolter, Karl ^a   Kurz, Heinrich ^a  

^a RWTH AACHEN UNIVERSITY   (Germany)

^b Sunweb Solar GmbH   (Germany)

^c FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

Electrically active defects; Junction formation; Laser induced defects; Laser processing

Indexed keywords

ACCEPTOR STATE; AMBIENT ATMOSPHERE; CONDUCTIVITY CHANGES; EFFICIENCY LOSS; ELECTRICALLY ACTIVE DEFECTS; ELECTROCHEMICAL CAPACITANCE VOLTAGE; JUNCTION FORMATION; LASER DOPING; LASER INDUCED; LASER PROCESS; LASER-INDUCED DEFECT; LOCKIN THERMOGRAPHY; NITROGEN ATMOSPHERES; OXYGEN INCORPORATION; P-TYPE; P-TYPE SILICON; PULSE ENERGIES; RECOMBINATION CENTRES; RESISTIVITY MEASUREMENT; SATURATION CURRENT DENSITIES; SOLAR CELL PARAMETERS; TEMPERATURE PROFILES;

OXYGEN; PHOSPHORUS; SECONDARY ION MASS SPECTROMETRY;

SURFACE DEFECTS;

EID: 84865590371     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2012.06.045     Document Type: Conference Paper

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