Temperature-dependent transport and transient photovoltaic properties of La 2/3Ca 1/3MnO 3/Nb:SrTiO 3 heteroepitaxial p-n junction

Journal of Applied Physics

Volumn 112, Issue 2, 2012, Pages

  Ni, H ^a,b   Da, S L ^b   Zhao, K ^b,c   Kong, Y C ^d   Wong, H K ^d   Zhao, S Q ^b  

^a CHINA UNIVERSITY OF PETROLEUM   (China)

^b CHINA UNIVERSITY OF PETROLEUM   (China)

^c INTERNATIONAL CENTRE FOR MATERIALS PHYSICS   (China)

^d CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; CARRIER CONDUCTION; ELECTROCHEMICAL MIGRATION; ELECTRONIC TRANSPORT; HETEROEPITAXIAL; JUNCTION INTERFACES; P-N JUNCTION; PHOTOVOLTAIC PROPERTY; TEMPERATURE DEPENDENT;

EPITAXIAL GROWTH; HETEROJUNCTIONS; STRONTIUM TITANATES;

MANGANESE OXIDE;

EID: 84865491060     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4737256     Document Type: Article

References (30)

1. H. Yamada, Y. Ogawa, Y. Ishii, H. Sato, M. Kawasaki, H. Akoh, and Y. Tokura, Science 305, 646 (2004). 10.1126/science.1098867
2. T. Fujii, M. Kawasaki, A. Sawa, Y. Kawazoe, H. Akoh, and Y. Tokura, Phys. Rev. B 75, 165101 (2007). 10.1103/PhysRevB.75.165101
3. J. Chakhalian, J. W. Freeland, H.-U. Habermeier, G. Cristiani, G. Khaliullin, M. van Veenendaal, and B. Keimer, Science 318, 1114 (2007). 10.1126/science.1149338
4. A. Asamitsu, Y. Tomioka, H. Kuwahara, and Y. Tokura, Nature (London) 388, 50 (1997). 10.1038/40363
5. K. Miyano, T. Tanaka, Y. Tomioka, and Y. Tokura, Phys. Rev. Lett. 78, 4257 (1997). 10.1103/PhysRevLett.78.4257
6. M. Itoh, K. Nishi, J. D. Yu, and Y. Inaguma, Phys. Rev. B 55, 14408 (1997). 10.1103/PhysRevB.55.14408
7. S. F. Wang, F. Q. Liu, G. Y. Yan, S. S. Chen, J. C. Chen, J. L. Wang, W. Yu, and G. S. Fu, Sci. China, Phys. Mech. Astron. 55, 772 (2012); 10.1007/s11433-012-4703-z
8. Y. J. Zhao, L. X. Zhang, Z. H. Dai, and W. T. Wang, Sci. China, Phys. Mech. Astron. 54, 1977 (2011); 10.1007/s11433-011-4505-8
9. J. Wen, H. Z. Guo, J. Xing, H. B. Lu, M. He, and G. Z. Yang, Sci. China, Phys. Mech. Astron. 53, 2080 (2010). 10.1007/s11433-010-4141-8
10. V. Markovich, E. Rozenberg, Y. Yuzhelevski, G. Jung, G. Gorodestsky, D. A. Shulyatev, and Ya. M. Mukovskii, Appl. Phys. Lett. 78, 3499 (2001). 10.1063/1.1376147
11. Y. G. Zhao, Y. H. Wang, G. M. Zhang, B. Zhang, X. P. Zhang, C. X. Yang, P. L. Lang, M. H. Zhu, and P. C. Guan, Appl. Phys. Lett. 86, 122502 (2005). 10.1063/1.1889241
12. M. Izumi, Y. Ogimoto, Y. Okimoto, T. Manako, P. Ahmet, K. Nakajima, T. Chikyow, M. Kawasaki, and Y. Tokura, Phys. Rev. B 64, 064429 (2001). 10.1103/PhysRevB.64.064429
13. H. Kumigashira, D. Kobayashi, R. Hashimoto, A. Chikamatsu, M. Oshima, N. Nakagawa, T. Ohnishi, M. Lippmaa, H. Wadati, A. Fujimori, K. Ono, M. Kawasaki, and H. Koinuma, Appl. Phys. Lett. 84, 5353 (2004). 10.1063/1.1766405
14. M. Izumi, Y. Murakami, Y. Konishi, T. Manako, M. Kawasaki, and Y. Tokura, Phys. Rev. B 60, 1211 (1999). 10.1103/PhysRevB.60.1211
15. S. J. May, A. B. Shah, S. G. E. te Velthuis, M. R. Fitzsimmons, J. M. Zuo, X. Zhai, J. N. Eckstein, S. D. Bader, and A. Bhattacharya, Phys. Rev. B 77, 174409 (2008). 10.1103/PhysRevB.77.174409
16. M. Minohara, I. Ohkubo, H. Kumigashira, and M. Oshima, Appl. Phys. Lett. 90, 132123 (2007). 10.1063/1.2717517
17. Y. Hikita, M. Nishikawa, T. Ya jima, and H. Y. Hwang, Phys. Rev. B 79, 073101 (2009). 10.1103/PhysRevB.79.073101
18. M. Ohtaki, H. Koga, T. Tokunaga, K. Eguchi, and H. Arai, J. Solid State Chem. 120, 105 (1995). 10.1006/jssc.1995.1384
19. M. Jaime, M. B. Salamon, K. Pettit, M. Rubinstein, R. Treece, J. Horwitz, and D. Chrisey, Appl. Phys. Lett. 68, 1576 (1996). 10.1063/1.116686
20. M. Jaime, H. Hardner, M. Salamon, M. Rubinstein, P. Dorsey, and D. Emin, Phys. Rev. Lett. 78, 951 (1997). 10.1103/PhysRevLett.78.951
21. T. Palstra, A. Ramirez, S.-W. Cheong, B. Zegarski, P. Schiffer, and J. Zaanen, Phys. Rev. B 56, 5104 (1997). 10.1103/PhysRevB.56.5104
22. S. H. Chun, M. Salamon, and P. Han, J. Appl. Phys. 85, 5573 (1999). 10.1063/1.369898
23. M. Sugiura, K. Uragou, M. Noda, M. Tachiki, and T. Kobayashi, Jpn. J. Appl. Phys., Part 1 38, 2675 (1999). 10.1143/JJAP.38.2675
24. H. Tanaka, J. Zhang, and T. Kawai, Phys. Rev. Lett. 88, 027204 (2002). 10.1103/PhysRevLett.88.027204
25. J. R. Sun, C. M. Xiong, T. Y. Zhao, S. Y. Zhang, Y. F. Chen, and B. G. Shen, Appl. Phys. Lett. 84, 1528 (2004). 10.1063/1.1664032
26. X. T. Zeng and H. K. Wong, Appl. Phys. Lett. 66, 3371 (1995). 10.1063/1.113761
27. H. Ni, K. Zhao, K. J. Jin, Y. C. Kong, H. K. Wong, W. F. Xiang, S. Q. Zhao, and S. X. Zhong, EPL 97, 46005 (2012). 10.1209/0295-5075/97/46005
28. A. G. Milnes and D. L. Feucht, Heterojunctions and Metal-Semiconductor Junctions (Academic, New York, 1972).
29. S. Asanuma, H. Akoh, H. Yamada, and A. Sawa, Phys. Rev. B 80, 235113 (2009). 10.1103/PhysRevB.80.235113
30. H. Ni, D. Yu, K. Zhao, Y.-C. Kong, H. K. Wong, S. Q. Zhao, and W. S. Zhang, J. Appl. Phys. 110, 033112 (2011). 10.1063/1.3620984