Piezoelectric strain induced variation of the magnetic anisotropy in a high Curie temperature (Ga,Mn)As sample

Applied Physics Letters

Volumn 101, Issue 8, 2012, Pages

  Casiraghi, A ^a   Rushforth, A W ^a   Zemen, J ^a,b   Haigh, J A ^a   Wang, M ^a   Edmonds, K W ^a   Campion, R P ^a   Gallagher, B L ^a  

^a UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^b INSTITUTE OF PHYSICS   (Czech Republic)

Author keywords

[No Author keywords available]

Indexed keywords

EASY AXIS; ELECTRIC GATING; ELECTRICAL CONTROL; FERROMAGNETIC SEMICONDUCTOR; HIGH CURIE TEMPERATURE; HIGH DOPING LEVEL; MAGNETOTRANSPORTS; PIEZOELECTRIC STRAIN; SUPERCONDUCTING QUANTUM INTERFERENCE DEVICE MAGNETOMETRY; UNIAXIAL MAGNETIC ANISOTROPY;

CURIE TEMPERATURE; ELECTRIC PROPERTIES; GALLIUM; MANGANESE; PIEZOELECTRIC ACTUATORS; SEMICONDUCTOR DOPING; SQUIDS;

MAGNETIC ANISOTROPY;

EID: 84865475871     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4746250     Document Type: Article

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