Low-temperature, in situ tunable, uniaxial stress measurements in semiconductors using a piezoelectric actuator

Applied Physics Letters

Volumn 83, Issue 25, 2003, Pages 5235-5237

  Shayegan, M ^a,b   Karrai, K ^a   Shkolnikov, Y P ^b   Vakili, K ^b   De Poortere, E P ^b   Manus, S ^a  

^a UNIVERSITY OF MUNICH   (Germany)

^b Princeton University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

PIEZOELECTRIC ACTUATORS; SCANNING PROBE MICROSCOPES; UNIAXIAL STRESS;

ALUMINUM COMPOUNDS; AMPLIFIERS (ELECTRONIC); COOLING; CREEP TESTING; DOPING (ADDITIVES); ELECTRON MOBILITY; ELECTRONIC PROPERTIES; FERMI LEVEL; HYSTERESIS; LOW TEMPERATURE PHENOMENA; MICROACTUATORS; PIEZOELECTRIC DEVICES; SEMICONDUCTOR QUANTUM WELLS; STRAIN GAGES; STRAIN MEASUREMENT; STRESS ANALYSIS;

SEMICONDUCTOR MATERIALS;

EID: 0942277732     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1635963     Document Type: Article

References (19)

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2. For stress-induced valley splitting in Si-metal-oxide-semiconductor field effect transistor 2D electrons, see G. Dorda, J. Appl. Phys. 42, 2053 (1971); D. C. Tsui and O. Kaminsky, Surf. Sci. 98, 400 (1980).
3. For previous reports of displacement/bias for piezoelectric tubes in the 4 to 300 K temperature range, see K. G. Vandervoort, R. K. Zasadzinski, G. G. Galicia, and G. W. Crabtree, Rev. Sci. Instrum. 64, 896 (1993); ibid. 65, 3862 (1994); D. S. Paik, S. E. Park, T. R. Shrout, and W. Hackenberger, J. Mater. Sci. 34, 469 (1999).
4. For previous reports of displacement/bias for piezoelectric tubes in the 4 to 300 K temperature range, see K. G. Vandervoort, R. K. Zasadzinski, G. G. Galicia, and G. W. Crabtree, Rev. Sci. Instrum. 64, 896 (1993); ibid. 65, 3862 (1994); D. S. Paik, S. E. Park, T. R. Shrout, and W. Hackenberger, J. Mater. Sci. 34, 469 (1999).
5. For previous reports of displacement/bias for piezoelectric tubes in the 4 to 300 K temperature range, see K. G. Vandervoort, R. K. Zasadzinski, G. G. Galicia, and G. W. Crabtree, Rev. Sci. Instrum. 64, 896 (1993); ibid. 65, 3862 (1994); D. S. Paik, S. E. Park, T. R. Shrout, and W. Hackenberger, J. Mater. Sci. 34, 469 (1999).
6. Part No. PSt 150/5×5×7, from Piezomechanik, Munich, Germany.
7. We used two types of strain gauges: (1) "Advance" (Ni 45%, Cu 55%), part No. SG-2/350-LY11, from Omega Engineering, and (2) "Karma" (Ni 74%, Cr 20%, Al 3%, Fe 3%), part No. WK-06-062TT-350, from Vishay Micromeasurements Group. For each type, the resistance change of the gauge ΔR/R, divided by its sensitivity factor, gives the strain defined as ΔL/L, where L is the length along the direction of the gauge axis. The Karma gauges have the advantage that corrections to their sensitivity factor, due to changes in temperature and transverse strain, are smaller and better known. Such corrections can be up to 20% (for the Advance gauges at low temperatures), and have been included in the strain data reported here.
8. Part No. 45640 "plus endfest 300", from UHU, Buehl, Germany. We cured the epoxy at 80 °C for 60 min.
9. We also have data al 0.30 K and 0.03 K; these ate similar to the 4.2 K data to within our experimental resolution.
10. See, e.g., R. C. Barren and C. F. Quate, Rev. Sci. Instrum. 62, 1393 (1991).
11. 3 ceramics by D. S. Paik et al., J. Mater Sci. 34, 469 (1999).
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13. Data of Figs. 1 and 2 were taken on two different piezo rods with slightly different strain versus bias characteristics.
14. y=23 bar in our experiments.
15. E. P. De Poortere, Y. P. Shkolnikov, E. Tutuc, S. J. Papadakis, and M. Shayegan, Appl. Phys. Lett. 80, 1583 (2002).
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17. Y. P. Shkolnikov, K. Vakili, E. P. De Poortere, M. Shayegan, and K. Karrai (unpublished). Because of finite residual stress during sample cooldown, we needed a piezo bias of about 34 V [vertical arrow in Fig. 4(a)] to attain the zero-stress condition in our experiment.
18. AlAs 2D electrons exhibit a nearly linear enhancement of valley splitting with B [Y. P. Shkolnikov, E. P. De Poortere, E. Tuluc, and M. Shayegan, Phys. Rev. Lett. 89, 226805 (2002)]. This enhancement is ignored in the schematic energy level diagram shown in Fig. 4(b).
19. F. F. Fang and P. J. Stiles, Phys. Rev. 174, 823 (1968).