SnO 2 functionalized AlGaN/GaN high electron mobility transistor for hydrogen sensing applications

International Journal of Hydrogen Energy

Volumn 37, Issue 18, 2012, Pages 13783-13788

  Hung, Shao Tsu ^a   Chang, Chi Jung ^a   Hsu, Chien Hsing ^a   Chu, Byung Hwan ^b   Lo, Chien Fong ^b   Hsu, Chin Ching ^b   Pearton, Stephen J ^b   Holzworth, Monta Raymond ^b   Whiting, Patrick Guzek ^b   Rudawski, Nicholas Guy ^b   Jones, Kevin S ^b   Dabiran, Amir ^c   Chow, Peter ^c   Ren, Fan ^b  

^a FENG CHIA UNIVERSITY   (Taiwan)

^b University of Florida   (United States)

^c SVT ASSOCIATES   (United States)

Author keywords

Annealing; High electron mobility transistors (HEMT); Hydrogen sensor; Tin oxide (SnO 2)

Indexed keywords

ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; ANNEALING TREATMENTS; CRYSTALLINE PROPERTIES; ELECTRON SHEETS; FUNCTIONALIZED; GAN LAYERS; GAS SENSING PROPERTIES; GATE REGION; HIGH ELECTRON MOBILITY TRANSISTOR (HEMT); HYDROGEN GAS SENSING; HYDROGEN SENSOR; HYDROGEN-SENSING; HYDROTHERMAL METHODS; LOW TEMPERATURES; PHOTOLITHOGRAPHY PROCESS; SCHOTTKY DIODES; SENSING PERFORMANCE; SENSING RESPONSE; XRD;

ANNEALING; CHEMICAL DETECTION; CRYSTALLINE MATERIALS; GALLIUM NITRIDE; GAS DETECTORS; HYDROGEN; MULTILAYER FILMS; PHOTOLITHOGRAPHY; SCHOTTKY BARRIER DIODES; SENSORS; TEMPERATURE; TIN; TIN OXIDES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84865453740     PISSN: 03603199     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ijhydene.2012.03.124     Document Type: Conference Paper

References (16)

1. T. Petkov, T.N. Veziroglu, and J.W. Sheffield An outlook of hydrogen as an automotive fuel Int J Hydrogen Energy 14 1989 449 474
2. P. Agnolucci Economics and market prospects of portable fuel cells Int J Hydrogen Energy 32 2007 4319 4328
3. L. Boon-Brett, G. Black, P. Moretto, and J. Bousek A comparison of test methods for the measurement of hydrogen sensor response and recovery times Int J Hydrogen Energy 35 2010 7652 7663
4. A. Travis, R. Fan, P. Stephen, S.-K. Byoung, H.-T. Wang, and Y.-C. Chih Advances in hydrogen, carbon dioxide, and hydrocarbon gas sensor technology using GaN and ZnO-based devices Sensors 9 2009 4669 4694
5. J.S. Wright, L. Wantae, D.P. Norton, S.J. Pearton, F. Ren, L.J. Jason, and Ant Ural Nitride and oxide semiconductor nanostructured hydrogen gas sensors Semicond Sci Technol 2010 25:024002
6. H.-T. Wang, B.-S. Kang, F. Ren, R.C. Fitch, J.K. Gillespie, and N. Moser Comparison of gate and drain current detection of hydrogen at room temperature with AlGaN/GaN high electron mobility transistors Appl Phys Lett 87 2005 172105 172108
7. Y.-L. Wang, B.H. Chu, C.Y. Chang, C.F. Lob, S.J. Peartona, and A. Dabiran Long-term stability study of botulinum toxin detection with AlGaN/GaN high electron mobility transistor based sensors Sensors and Actuators B 146 2010 349 352
8. 2 nanomaterials Sensors and Actuators B 154 2011 264 269
9. D.D. Vuong, G. Sakai, K. Shimanoe, and N. Yamazoe Preparation of grain size-controlled tin oxide sols by hydrothermal treatment for thin film sensor application Sensors and Actuators B 103 2004 386 391
10. 2 sensor network Sensors and Actuators B 82 2002 166 175
11. S. Shukla, S. Seal, L. Ludwig, and C. Parish Nanocrystalline indium oxide-doped tin oxide thin film as low temperature hydrogen sensor Sensors and Actuators B 97 2004 256 265
12. 2 nanowires that can be used for gas sensing under ambient conditions J Am Chem Soc 125 2003 16176 16177
13. 2 nanotubes for a hydrogen sensor Int J Hydrogen Energy 35 2010 4420 4427
14. 2 gas sensing properties of tin oxide nanohole arrays with various electrodes Sensors and Actuators B 113 2006 852 856
15. V. Azaroff Elements of X-ray crystallography 1968 McGraw-Hill New York p. 552
16. X. Liu, D. Zhang, Y. Zhang, and X. Dai Preparation and characterization of p-type semiconducting tin oxide thin film gas sensors J Appl Phys 107 2010 064309 064314