Calculation of the surface potential and surface charge density by measurement of the three-phase contact angle

Journal of Colloid and Interface Science

Volumn 385, Issue 1, 2012, Pages 218-224

  Horiuchi, H ^a   Nikolov, A ^a   Wasan, D T ^a  

^a Illinois Institute of Technology   (United States)

Author keywords

Contact angle; Solid liquid interfacial energy; Surface charge density; Surface potential; Young Lippmann equation

Indexed keywords

ELECTRIC DOUBLE LAYER; ELECTRONIC DEVICE; EXPERIMENTAL DATA; GOUY-CHAPMAN MODEL; MICA SHEETS; MODEL RESULTS; MODEL-BASED OPC; POTENTIOMETRIC TITRATION METHODS; SEMICONDUCTOR INDUSTRY; SILANOL GROUPS; SOLID/LIQUID; SURFACE IONIZATION; THREE-PHASE CONTACT; YOUNG-LIPPMANN EQUATION;

CHARGE DENSITY; CONTACT ANGLE; IONIZATION; MICA; SEMICONDUCTOR DEVICE MANUFACTURE; SILICA; SURFACE CHARGE; SURFACE CHEMISTRY; TITRATION; VOLTAMMETRY;

SURFACE POTENTIAL;

SILICON; SILICON DIOXIDE;

ARTICLE; CALCULATION; CONTACT ANGLE; ELECTRICAL EQUIPMENT; ELECTRONICS INDUSTRY; IONIZATION; PH; PHYSICAL CHEMISTRY; POTENTIOMETRY; PRIORITY JOURNAL; SEMICONDUCTOR; SILICA SILICON WAFER; SURFACE PROPERTY; THREE PHASE CONTACT ANGLE;

EID: 84865393457     PISSN: 00219797     EISSN: 10957103     Source Type: Journal    
DOI: 10.1016/j.jcis.2012.06.078     Document Type: Article

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