Characterization of TlBr x Cl 1-x crystals for radiation detectors

IEEE Transactions on Nuclear Science

Volumn 59, Issue 4 PART 3, 2012, Pages 1559-1562

  Onodera, Toshiyuki ^a   Hitomi, Keitaro ^b   Onodera, Chikara ^c   Shoji, Tadayoshi ^a   Mochizuki, Katsumi ^d  

^a TOHOKU INSTITUTE OF TECHNOLOGY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c Aomori Prefectural Towada Technical Senior High School   (Japan)

^d ISHINOMAKI SENSHU UNIVERSITY   (Japan)

Author keywords

Compound semiconductors; semiconductor radiation detectors; thallium bromide (TlBr)

Indexed keywords

BAND GAP ENERGY; CL-CONCENTRATIONS; COMPOUND SEMICONDUCTORS; MOBILITY-LIFETIME PRODUCTS; MOLTEN ZONES; ROOM TEMPERATURE; SEMICONDUCTOR RADIATION DETECTORS; THALLIUM BROMIDE;

BROMINE COMPOUNDS; CHLORINE; CHLORINE COMPOUNDS; OPTICAL PROPERTIES; THALLIUM; TRANSPORT PROPERTIES;

THALLIUM COMPOUNDS;

EID: 84865386706     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2012.2200504     Document Type: Article

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