High efficiency on boron emitter n-type Cz silicon solar cells with industrial process

IEEE Journal of Photovoltaics

Volumn 1, Issue 2, 2011, Pages 118-122

  Veschetti, Yannick ^a   Cabal, Raphael ^a   Brand, Pierre ^a   Sanzone, Vincent ^a   Raymond, Gaetan ^a   Bettinelli, Armand ^a  

^a LITEN   (France)

Author keywords

Photovoltaic cells; silicon

Indexed keywords

AREA REDUCTION; BACKSURFACE FIELD; CELL EFFICIENCY; CONTACT AREAS; DOPING LEVELS; INDUSTRIAL PROCESSS; LIGHT BEAM INDUCED CURRENTS; LIGHT SOAKING; MAXIMUM EFFICIENCY; PROCESS FLOWS; REAR SIDE; RECOMBINATION ACTIVITY; SCREEN-PRINTED;

BORON; EFFICIENCY; INDUCED CURRENTS; METALLIZING; OPEN CIRCUIT VOLTAGE; PHOTOVOLTAIC CELLS; SILICON; SILICON WAFERS;

SILICON SOLAR CELLS;

EID: 84865173356     PISSN: 21563381     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPHOTOV.2011.2167958     Document Type: Article

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