High-efficiency, multijunction nc-Si:H-based solar cells at high deposition rate

IEEE Journal of Photovoltaics

Volumn 2, Issue 2, 2012, Pages 99-103

  Banerjee, Arindam ^a   Su, Tining ^a   Beglau, Dave ^a   Pietka, Ginger ^a   Liu, Frank S ^b   Almutawalli, Salman ^a   Yang, Jeff ^a   Guha, Subhendu ^a  

^a UNITED SOLAR OVONIC LLC   (United States)

^b SHAANXI NORMAL UNIVERSITY   (China)

Author keywords

Amorphous; nanocrystalline; photovoltaic; silicon; solar cells; thin film

Indexed keywords

A-SI:H; APERTURE AREA; ENCAPSULATED CELL; GLOW DISCHARGE DEPOSITION; HIGH DEPOSITION RATES; HIGH FREQUENCY HF; HIGH RATE; HYDROGENATED NANOCRYSTALLINE SILICON (NC-SI:H); INITIAL EFFICIENCY; LIGHT-INDUCED DEGRADATION; LONG WAVELENGTH; MULTIJUNCTION; NANOCRYSTALLINES; NATIONAL RENEWABLE ENERGY LABORATORY; NC-SI:H; PHOTOVOLTAIC; SILICON-GERMANIUM ALLOYS; STABLE EFFICIENCIES; THIN-FILM SILICON SOLAR CELLS; TRIPLE JUNCTION SOLAR CELLS;

AMORPHOUS MATERIALS; DEGRADATION; EFFICIENCY; GERMANIUM ALLOYS; HYDROGENATION; NANOCRYSTALLINE SILICON; SILICON; SOLAR CELLS; THIN FILMS;

AMORPHOUS SILICON;

EID: 84865171084     PISSN: 21563381     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPHOTOV.2011.2180892     Document Type: Article

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