Interaction of zinc interstitial with oxygen vacancy in zinc oxide: An origin of n-type doping

Solid State Communications

Volumn 152, Issue 18, 2012, Pages 1711-1714

  Kim, Dae Hee ^a   Lee, Ga Won ^b   Kim, Yeong Cheol ^a  

^a Korea University of Technology and Education   (South Korea)

^b Chungnam National University   (South Korea)

Author keywords

A. Semiconductor; C. n type zinc oxide; D. Native point defect; E. Density functional theory

Indexed keywords

CHARGE STATE; CONDUCTION-BAND MINIMUM; FORMATION ENERGIES; KINETIC ASPECTS; N-TYPE DOPING; SHALLOW DONORS; ZNO;

DENSITY FUNCTIONAL THEORY; OXYGEN VACANCIES; POINT DEFECTS; ZINC OXIDE;

ZINC;

EID: 84864997728     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2012.06.016     Document Type: Article

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