140-220 GHz SPST and SPDT switches in 45 nm CMOS SOI

IEEE Microwave and Wireless Components Letters

Volumn 22, Issue 8, 2012, Pages 412-414

  Uzunkol, Mehmet ^a   Rebeiz, Gabriel M ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

45 nm CMOS; millimeter wave; single pole single throw (SPST)

Indexed keywords

45 NM CMOS; ADVANCED CMOS; CMOS SYSTEMS; CMOS TECHNOLOGY; HIGH ISOLATION; RETURN LOSS; SINGLE-POLE DOUBLE-THROW SWITCHES; SINGLE-POLE SINGLE-THROW (SPST); SPST SWITCH;

CMOS INTEGRATED CIRCUITS; INSERTION LOSSES; POLES;

SEMICONDUCTOR SWITCHES;

EID: 84864937623     PISSN: 15311309     EISSN: None     Source Type: Journal    
DOI: 10.1109/LMWC.2012.2206017     Document Type: Article

References (14)

1. E. Dacquay et al, "D-band total power radiometer performance optimization in an SiGe HBT technology," IEEE Trans. Microw. Theory Tech., vol. 60, no. 3, pp. 813-826, Mar. 2012.
2. E. Ojefors et al., "A 820 GHz SiGe chipset for terahertz active imaging applications," in IEEE Int. Solid-State Circuits Conf. Tech. Dig., Feb. 2011, pp. 224-226.
3. R. Han et al, "280 GHz and 860 GHz image sensors using schottky-barrier diodes in 0.13//m digital CMOS," in IEEE Int. Solid-State Circuits Conf. Tech. Dig., Feb. 2012, pp. 254-256.
4. A. Hirata et al, "120-GHz-band wireless link technologies for outdoor 10-Gbit/s data transmission," IEEE Trans. Microw. Theory Tech., vol. 60, no. 3, pp. 881-895, Mar. 2012.
5. Y. A. Atesal, B. Cetinoneri, M. Chang, and G. M. Rebeiz, "Millimeter-wave wafer-scale silicon BiCMOS power amplifiers using free-space power combining," IEEE Trans. Microw. Theory Tech., vol. 59, no. 4, pp. 954-965, Apr. 2011.
6. Z. Xu, Q. J. Gu, and M.-C. F. Chang, "A three stage, fully differential 128-157 GHz CMOS amplifier with wide band matching," IEEE Microw. and Wireless Comp. Lett., vol. 21, no. 10, pp. 550-552, Oct. 2011.
7. O. Inac, A. Fung, and G. M. Rebeiz, "Double-balanced 130-180 GHz passive and balanced 145-165 GHz active mixers in 45 nm CMOS," in IEEE Custom Integrated Circuits Conf. (CICC), Sep. 2011, pp. 1-4.
8. B. Cetinoneri, Y. A. Atesal, A. Fung, and G. M. Rebeiz, "W-band amplifiers with 6-dB noise figure and milliwatt-level 170-200 GHz dou-blers in 45 nm CMOS," IEEE Trans. Microw. Theory Tech., vol. 60, no. 3, pp. 692-701, Mar. 2012.
9. E. Laskin et al, "Nanoscale CMOS transceiver design in the 90-170 GHz range," IEEE Trans. Microw. Theory Tech., vol. 57, no. 12, pp. 3477-3490, Dec. 2009.
10. U. Yodprasit etal, "D-band 3.6-dB-insertion-loss ASK modulator with 19.5-dB isolation in 65 nm CMOS technology," in Asia-Pacific Microw. Symp. Dig., Dec. 2010, pp. 1853-1856.
11. S. Lee et al, "Record RF performance of 45 nm SOI CMOS technology," in IEEE Int. Electron Devices Meeting, Dec. 2007, pp. 255-258.
12. M. Uzunkol and G. M. Rebeiz, "A low-loss 50-70 GHz SPDT switch in 90 nm CMOS," IEEE J. Solid-State Circuits, vol. 45, no. 10, pp. 2003-2007, Oct. 2010.
13. A. Tomkins, P. Garcia, and S. P. Voinigescu, "A 94 GHz SPST switch in 65 nm bulk CMOS," in IEEE Compound Semiconductor Integrated Circuits Symp., Oct. 2008, pp. 1-4.
14. Sonnet ver.12.52. Syracuse, NY, Sonnet Software Inc., 2009.