MOSFETs reliability : Electron trapping in gate dielectric

IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

Volumn , Issue , 2000, Pages 104-109

  Soin, Norhayati ^a   Zhang, J F ^b   Groeseneken, G ^c  

^a UNIVERSITY OF MALAYA   (Malaysia)

^b LIVERPOOL JOHN MOORES UNIVERSITY   (United Kingdom)

^c IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE PUMPING; CHARGE PUMPING TECHNIQUE; ELECTRON TRAPPING; GROWTH CONDITIONS; HOT CARRIER DEGRADATION; INTERFACE STATE DENSITY; INTERFACE TRAP GENERATION; INTERFACE TRAPS; MOSFETS; NMOSFET; NMOSFETS; OXYNITRIDES; WELL-ESTABLISHED TECHNIQUES;

DEGRADATION; DIELECTRIC MATERIALS; ELECTRON TRAPS; MOSFET DEVICES;

GATE DIELECTRICS;

EID: 84864714869     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

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