New method for selectivity enhancement of SiC field effect gas sensors for quantification of NO x

Microsystem Technologies

Volumn 18, Issue 7-8, 2012, Pages 1015-1025

  Bur, Christian ^a,b   Reimann, Peter ^a   Andersson, Mike ^b   Spetz, Anita Lloyd ^b   Schütze, Andreas ^a  

^a SAARLAND UNIVERSITY   (Germany)

^b LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ADVANCED SIGNAL PROCESSING; AMBIENT GAS; CROSS SENSITIVITY; FIELD EFFECTS; FIELD-EFFECT GAS SENSORS; GATE METALLIZATION; HUMID CONDITIONS; LINEAR DISCRIMINANT ANALYSIS; METAL INSULATORS; MULTIVARIATE STATISTICS; OPERATING MODES; SELECTIVITY ENHANCEMENT; SENSOR DRIFT; SENSOR RESPONSE; TEMPERATURE CYCLING; TRAINING DATA;

FIELD EFFECT TRANSISTORS; GAS DETECTORS; METAL INSULATOR BOUNDARIES; SIGNAL PROCESSING; SILICON CARBIDE;

SENSORS;

EID: 84864575340     PISSN: 09467076     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00542-012-1434-z     Document Type: Conference Paper

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