Role of beryllium doping in strain changes in II-type InAs/GaSb superlattice investigated by high resolution X-ray diffraction method

Applied Physics A: Materials Science and Processing

Volumn 108, Issue 2, 2012, Pages 491-496

  Sankowska, I ^a   Jasik, A ^a   Kubacka Traczyk, J ^a   Domagala, J Z ^a,b   Reginski K ^a  

^a ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

^b INSTITUTE OF PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING CONCENTRATION; DOPING LEVELS; HIGH-RESOLUTION X-RAY DIFFRACTION; HRXRD; INAS/GASB SUPERLATTICES; SECONDARY ION MASS SPECTROSCOPY; STRAIN CHANGE; THEORETICAL SIMULATION;

BERYLLIUM; DOPING (ADDITIVES); GALLIUM ALLOYS; INDIUM ANTIMONIDES; LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; SECONDARY ION MASS SPECTROMETRY; SEPARATION; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

SUPERLATTICES;

EID: 84864547556     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s00339-012-6919-1     Document Type: Article

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