SCOPUS 정보 검색 플랫폼

Solid State Phenomena

Volumn 47-48, Issue , 1996, Pages 437-442

GaAlAs lattice parameter dependence on free electron concentration

(4) Bak Misiuk, J a Leszczynski, M b Domagala, J a Trela, J a

a INSTITUTE OF PHYSICS (Poland)

b INSTITUTE OF HIGH PRESSURE PHYSICS (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

COLOR CENTERS; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; LATTICE CONSTANTS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON COMPOUNDS;

BOND METHOD; DEFORMATION POTENTIAL; DX CENTERS; ELECTRON CONCENTRATION; FREE ELECTRON CONCENTRATION; HIGH RESOLUTION DIFFRACTOMETERS; PARAMETER DEPENDENCE;

ELECTRONS;

EID: 17544362426 PISSN: 10120394 EISSN: None Source Type: Book Series
DOI: None Document Type: Article

Times cited : (2)

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