Revisiting properties of ferroelectric and multiferroic thin films under tensile strain from first principles

Physical Review Letters

Volumn 109, Issue 5, 2012, Pages

  Yang, Yurong ^a,b   Ren, Wei ^a,c   Stengel, Massimiliano ^d,e   Yan, X H ^b,f   Bellaiche, L ^a  

^a UNIVERSITY OF ARKANSAS   (United States)

^b NANJING UNIVERSITY OF AERONAUTICS AND ASTRONAUTICS   (China)

^c SHANGHAI UNIVERSITY   (China)

^d UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^e INSTITUCIÓ CATALANA DE RECERCA I ESTUDIS AVANÇATS ICREA   (Spain)

^f NANJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANTI FERROELECTRICS; ATOMIC BONDS; BFO FILMS; CATION DISPLACEMENTS; FERROELECTRIC PHASIS; FIRST-PRINCIPLES CALCULATION; IN-PHASE; IN-PLANE POLARIZATION; MICROSCOPIC POINTS; MISFIT STRAINS; MULTIFERROIC THIN FILMS; ORBITAL ORDERING; OUT-OF-PLANE DIRECTION; OXYGEN OCTAHEDRA; PEROVSKITE FILMS;

CALCULATIONS; FERROELECTRICITY; PEROVSKITE; POLARIZATION; THIN FILMS;

TENSILE STRAIN;

EID: 84864451351     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.109.057602     Document Type: Article

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