Effect of deposition temperature on the structural and optical properties of chemically prepared nanocrystalline lead selenide thin films

Beilstein Journal of Nanotechnology

Volumn 3, Issue 1, 2012, Pages 438-443

  Begum, Anayara ^a   Hussain, Amir ^a   Rahman, Atowar ^a  

^a GAUHATI UNIVERSITY   (India)

Author keywords

Chemical bath deposition; Lattice parameter; Lead selenide; Nelson Riley plot; Optical absorption

Indexed keywords

BLUE SHIFT; CHEMICAL BATH DEPOSITION METHODS; CHEMICAL-BATH DEPOSITION; COMPLEXING AGENTS; DEPOSITION TEMPERATURES; DISLOCATION DENSITIES; FILM PROPERTIES; GLASS SUBSTRATES; LEAD ACETATE; LEAD SELENIDE; MICRO-STRAIN; NANOCRYSTALLINES; NELSON-RILEY PLOT; OPTICAL ABSORPTION STUDIES; PH VALUE; SCHERRER'S FORMULA; STRUCTURAL AND OPTICAL PROPERTIES; STRUCTURAL PARAMETER; TRISODIUM CITRATES; X RAY FLUORESCENCE; XRD SPECTRA;

CRYSTALLITE SIZE; DEPOSITION; LATTICE CONSTANTS; LEAD; LIGHT ABSORPTION; OPTICAL PROPERTIES; PH EFFECTS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SELENIUM COMPOUNDS; SUBSTRATES; THIN FILMS; VAPOR DEPOSITION; X RAY DIFFRACTION;

FILM PREPARATION;

EID: 84864318498     PISSN: None     EISSN: 21904286     Source Type: Journal    
DOI: 10.3762/bjnano.3.50     Document Type: Article

References (24)

1. Gao, S.; Liu, D.; Xu, D.; Li, D.; Hong, Y.; Chen, H.; Dai, Q.; Kan, S.; Li, H.; Zou, G. Smart Mater. Struct. 2007, 16, 2350-2353. doi:10.1088/0964-1726/16/6/039
2. Sashchiuk, A.; Amirav, L.; Bashouti, M.; Krueger, M.; Sivan, U.; Lifshitz, E. Nano Lett. 2004, 4, 159-165. doi:10.1021/nl0345116
3. Murray, C. B.; Sun, S.; Gaschler, W.; Doyle, H.; Betley, T. A.; Kagan, C. R. IBM J. Res. Dev. 2001, 45, 47-56. doi:10.1147/rd.451.0047
4. Allan, G.; Delerue, C. Phys. Rev. B 2004, 70, 245321. doi:10.1103/PhysRevB.70.245321
5. Shen, W. Z.; Wang, K.; Jiang, L. F.; Wang, X. G.; Shen, S. C.; Wu, H. Z.; McCann, P. J. Appl. Phys. Lett. 2001, 79, 2579-2581. doi:10.1063/1.1406988
6. Lee, M.-H.; Chung, W. J.; Park, S. K.; Kim, M.-s.; Seo, H. S.; Ju, J. J. Nanotechnology 2005, 16, 1148-1152. doi:10.1088/0957-4484/16/8/028
7. Yamamoto, O.; Sasamoto, T.; Inagaki, M. J. Mater. Res. 1998, 13, 3394-3398. doi:10.1557/JMR.1998.0462
8. Kumar, S.; Khan, Z. H.; Majeed Khan, M. A.; Husain, M. Curr. Appl. Phys. 2005, 5, 561-566. doi:10.1016/j.cap.2004.07.001
9. Zhu, J.; Palchik, O.; Chen, S.; Gedanken, A. J. Phys. Chem. B 2000, 104, 7344-7347. doi:10.1021/jp001488t
10. Rumianowski, R. T.; Dygdala, R. S.; Jung, W.; Bala, W. J. Cryst. Growth 2003, 252, 230-235. doi:10.1016/S0022-0248(02)02528-9
11. Vaidyanathan, R.; Stickney, J. L.; Happek, U. Electrochim. Acta 2004, 49, 1321-1326. doi:10.1016/j.electacta.2003.07.019
12. Saloniemi, H.; Kanniainen, T.; Ritala, M.; Leskelä, M.; Lappalainen, R. J. Mater. Chem. 1998, 8, 651-654. doi:10.1039/a706471c
13. Gorer, S.; Albu-Yaron, A.; Hodes, G. Chem. Mater. 1995, 7, 1243-1256. doi:10.1021/cm00054a02714.
14. Bhardwaj, A.; Srivastava, P.; Sehgal, H. K. J. Electrochem. Soc. 2007, 154, K83-K86. doi:10.1149/1.2763963
15. Kale, R. B.; Lokhande, C. D. Appl. Surf. Sci. 2004, 223, 343-351. doi:10.1016/j.apsusc.2003.09.022
16. Hankare, P. P.; Delekar, S. D.; Bhuse, V. M.; Garadkar, K. M.; Sabane, S. D.; Gavali, L. V. Mater. Chem. Phys. 2003, 82, 505-508. doi:10.1016/S0254-0584(03)00375-4
17. Cullity, B. D. Elements of X-ray diffraction, 2nd ed.; Addison-Wesley Publishing Company, Inc.: CA, USA, 1978; pp 327-335.
18. Borah, M. N.; Chaliha, S.; Sarmah, P. C.; Rahman, A. Optoelectron. Adv. Mater. Rapid Commun. 2008, 2, 342-348.
19. Nelson, J. B.; Riley, D. P. Proc. Phys. Soc., London 1945, 57, 160. doi:10.1088/0959-5309/57/3/302
20. Lifshim, E. X-ray characterization of materials; Wiley: New York, 1999; p 37.
21. Girija, K.; Thirumalairajan, S.; Mohan, S. M.; Chandrasekaran, J. Chalcogenide Lett. 2009, 6, 351-357.
22. Ungár, T.; Tichy, G.; Gubicza, J.; Hellmig, R. J. Powder Diffr. 2005, 20, 366-375. doi:10.1154/1.2135313
23. Joshi, R. K.; Kanjilal, A.; Sehgal, H. K. Nanotechnology 2003, 14, 809-812. doi:10.1088/0957-4484/14/7/320
24. Gorer, S.; Albu-Yaron, A.; Hodes, G. J. Phys. Chem. 1995, 99, 16442-16448. doi:10.1021/j100044a036