Surface properties of stoichiometric and defect-rich indium oxide films grown by MOCVD

Journal of Applied Physics

Volumn 111, Issue 9, 2012, Pages

  Himmerlich, M ^a   Wang, Ch Y ^b   Cimalla, V ^b   Ambacher, O ^a   Krischok, S ^a  

^a ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

^b FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

GROWTH CONDITIONS; HIGH SENSITIVITY; INDIUM OXIDE; INDIUM OXIDE FILMS; LOW TEMPERATURES; NANOCRYSTALLINE SAMPLE; OZONE SENSITIVITY; RHOMBOHEDRAL CRYSTALS; SURFACE CHEMICALS;

ELECTRONIC PROPERTIES; INDIUM; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OXIDE FILMS; OZONE; PHOTOELECTRON SPECTROSCOPY; SURFACE PROPERTIES;

SURFACE DEFECTS;

EID: 84864270315     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4704700     Document Type: Article

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