SiGe circuits for THz applications

2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings

Volumn , Issue , 2012, Pages 78-79

  Pfeiffer, U R ^a  

^a UNIVERSITY OF WUPPERTAL   (Germany)

Author keywords

receiver; SiGe technology; terahertz circuits; transmitter

Indexed keywords

EMERGING APPLICATIONS; ON CHIP ANTENNA; SIGE HBTS; SIGE TECHNOLOGY; SUB-HARMONICALLY PUMPED; TERA HERTZ; TERAHERTZ FREQUENCIES;

HETEROJUNCTION BIPOLAR TRANSISTORS; RECEIVERS (CONTAINERS); TRANSMITTERS;

SILICON ALLOYS;

EID: 84864262057     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISTDM.2012.6222466     Document Type: Conference Paper

References (2)

1. A. M. Tyryshkin, S. A. Lyon, W. Jantsch, & F. Schäffler, "Spin manipulation of free two-dimensional electrons in Si/SiGe quantum wells," Phys. Rev. Lett., vol 94, pp. 126802, 2005.
2. T. M. Lu, N. C. Bishop, T. Pluym, J. Means, P. G. Kotula, J. Cederberg, L. A. Tracy, J. Dominguez, M. P. Lilly, and M. S. Carroll, "Enhancement- mode buried strained silicon channel quantum dot with tunable lateral geometry," Appl. Phys. Lett., vol. 99, no. 4, pp. 043101, 2011.