Thermoelectric properties of epitaxial TbAs:InGaAs nanocomposites

Journal of Applied Physics

Volumn 111, Issue 9, 2012, Pages

  Clinger, Laura E ^a   Pernot, Gilles ^b   Buehl, Trevor E ^c   Burke, Peter G ^c   Gossard, Arthur C ^c   Palmstrom, Christopher J ^c   Shakouri, Ali ^b   Zide, Joshua M O ^a  

^a UNIVERSITY OF DELAWARE   (United States)

^b University of California Santa Cruz   (United States)

^c University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY-BAND ALIGNMENT; HIGH TEMPERATURE; INP; LATTICE-MATCHED; RANDOMLY DISTRIBUTED; ROOM TEMPERATURE; SCANNING TRANSMISSION ELECTRON MICROSCOPY; SURROUNDING MATRIX; THERMOELECTRIC FIGURE OF MERIT; THERMOELECTRIC POWER FACTORS; THERMOELECTRIC PROPERTIES;

EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; NANOCOMPOSITES; NANOPARTICLES; THERMAL CONDUCTIVITY; THERMOELECTRIC EQUIPMENT; THERMOELECTRIC POWER; THERMOELECTRICITY; TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTING INDIUM;

EID: 84864241602     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4711095     Document Type: Article

References (19)

1. G. J. Snyder and T. Ursell, Phys. Rev. Lett. 91, 148301 (2003). 10.1103/PhysRevLett.91.148301
2. C. J. Vineis, A. Shakouri, A. Majumdar, and M. G. Kanatzidis, Adv. Mater. 22, 3970 (2010). 10.1002/adma.201000839
3. W. Kim, J. Zide, A. Gossard, D. Klenov, S. Stemmer, A. Shakouri, and A. Majumdar, Phys. Rev. Lett. 96, 045901 (2006). 10.1103/PhysRevLett.96.045901
4. J. M. Zide, D. O. Klenov, S. Stemmer, A. C. Gossard, G. Zeng, J. E. Bowers, D. Vashaee, and A. Shakouri, Appl. Phys. Lett. 87, 112102 (2005). 10.1063/1.2043241
5. J. M. O. Zide, J.-H. Bahk, R. Singh, M. Zebarjadi, G. Zeng, H. Lu, J. P. Feser, D. Xu, S. L. Singer, Z. X. Bian, A. Majumdar, J. E. Bowers, A. Shakouri, and A. C. Gossard, J. Appl. Phys. 108, 123702 (2010). 10.1063/1.3514145
6. L. E. Cassels, T. E. Buehl, P. G. Burke, C. J. Palmstrom, A. C. Gossard, G. Pernot, A. Shakouri, C. R. Haughn, M. F. Doty, and J. M. O. Zide, J. Vac. Sci. Technol. B 29, 03C114 (2011). 10.1116/1.3555388
7. K. Delaney, N. Spaldin, and C. Van De Walle, Phys. Rev. B 77, 235117 (2008). 10.1103/PhysRevB.77.235117
8. K. Delaney, private communication (April 2011).
9. D. Vashaee and A. Shakouri, Phys. Rev. Lett. 92, 106103 (2004). 10.1103/PhysRevLett.92.106103
10. M. A. Scarpulla, T. E. Buehl, B. Mellot, R. V. Chopdekar, K. M. Yu, R. Farshchi, and A. C. Gossard, presented at the North American Molecular Beam Epitaxy Conference, Breckenridge, Colorado, 2010.
11. D. O. Klenov, J. M. O. Zide, J. M. LeBeau, A. C. Gossard, and S. Stemmer, Appl. Phys. Lett. 90, 121917 (2007). 10.1063/1.2715174
12. P. G. Burke, H. Lu, N. G. Rudawski, S. Stemmer, and A. C. Gossard, J. Vac. Sci. Technol. B 29, 03C117 (2011). 10.1116/1.3559480
13. L. H. Brixner, J. Inorg. Nucl. Chem. 15, 199 (1960). 10.1016/0022- 1902(60)80038-3
14. J. Zide, D. Vashaee, Z. Bian, G. Zeng, J. Bowers, A. Shakouri, and A. Gossard, Phys. Rev. B 74, 205335 (2006). 10.1103/PhysRevB.74.205335
15. D. G. Cahill, W. K. Ford, K. E. Goodson, G. D. Mahan, A. Majumdar, H. J. Maris, R. Merlin, and S. R. Phillpot, J. Appl. Phys. 93, 793 (2003). 10.1063/1.1524305
16. G. Pernot, M. Stoffel, I. Savic, F. Pezzoli, P. Chen, G. Savelli, A. Jacquot, J. Schumann, U. Denker, I. Mönch, Ch. Deneke, O. G. Schmidt, J. M. Rampnoux, S. Wang, M. Plissonnier, A. Rastelli, S. Dilhaire, and N. Mingo, Nature Mater. 9, 491 (2010). 10.1038/nmat2752
17. P. G. Burke, private communication (2011).
18. W. Kim, S. L. Singer, A. Majumdar, J. M. O. Zide, D. Klenov, A. C. Gossard, and S. Stemmer, Nano Lett. 8 (7), 2097 (2008). 10.1021/nl080189t
19. H. Lu, P. G. Burke, A. C. Gossard, G. Zeng, A. T. Ramu, J.-H. Bahk, and J. E. Bowers, Adv. Mater. 23, 2377 (2011). 10.1002/adma.201100449