Transport properties of high-performance all-Heusler Co 2CrSi/ Cu 2CrAl/Co 2CrSi giant magnetoresistance device

Journal of Applied Physics

Volumn 111, Issue 9, 2012, Pages

  Bai, Z Q ^a,b   Lu, Y H ^a   Shen, L ^b   Ko, V ^b   Han, G C ^b   Feng, Y P ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b DATA STORAGE INSTITUTE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIPARALLEL CONFIGURATION; CONDUCTIVE CHANNELS; CURRENT-PERPENDICULAR-TO-PLANE GIANT MAGNETORESISTANCE; FIRST-PRINCIPLES APPROACHES; HEUSLER ALLOYS; HIGH DENSITY MAGNETIC STORAGE; I - V CURVE; MAGNETIC CONFIGURATION; MAGNETORESISTANCE RATIO; MR RATIO; NON EQUILIBRIUM GREEN'S FUNCTION METHOD; SPIN VALVE; TRILAYERS;

CARBON DIOXIDE; DENSITY FUNCTIONAL THEORY; ELECTRODES; GIANT MAGNETORESISTANCE; MAGNETIC STORAGE;

TRANSPORT PROPERTIES;

EID: 84864239455     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4712301     Document Type: Article

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