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Volumn 48, Issue 12, 2012, Pages 712-714

Field emission in lateral silicon diode fabricated by atomic force microscopy lithography

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY LITHOGRAPHY; EMITTING AREAS; FIELD EMISSION DIODE; FIELD ENHANCEMENT FACTOR; FOWLER-NORDHEIM; GAP WIDTHS; HIGH EMISSION CURRENT; SILICON DIODES; SMOOTH SURFACE;

EID: 84864214857     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el.2012.1020     Document Type: Article
Times cited : (38)

References (6)
  • 1
    • 77958449161 scopus 로고    scopus 로고
    • P 1-18: IV characteristics of nanogap electrodes formed by thermally assisted electromigration
    • Palo Alto, CA, USA, July
    • Singh, A.K., Rajput, N.S., Banerjee, A., Kulkarni, V.N., and Kumar, J.: ' P 1-18: IV characteristics of nanogap electrodes formed by thermally assisted electromigration ', Int. Conf. on Vacuum Nanoelectronics, Palo Alto, CA, USA, July, 2010, p. 64
    • (2010) Int. Conf. on Vacuum Nanoelectronics , pp. 64
    • Singh, A.K.1    Rajput, N.S.2    Banerjee, A.3    Kulkarni, V.N.4    Kumar, J.5
  • 4
    • 84860745763 scopus 로고    scopus 로고
    • Fabrication of nanogap electrodes via nano-oxidation mask by scanning probe microscopy nanolithography
    • 10.1117/1.3643480
    • Rouhi, J., Mahmud, S., Hutagalung, S.D., and Kakooei, S.: ' Fabrication of nanogap electrodes via nano-oxidation mask by scanning probe microscopy nanolithography ', J. Micro/Nanolithography, MEMS, MOEMS, 2011, 10, p. 043002 10.1117/1.3643480
    • (2011) J. Micro/Nanolithography, MEMS, MOEMS , vol.10 , pp. 043002
    • Rouhi, J.1    Mahmud, S.2    Hutagalung, S.D.3    Kakooei, S.4
  • 5
    • 0031167744 scopus 로고    scopus 로고
    • Lateral field emission diodes using SIMOX wafer
    • 10.1109/16.585560 0018-9383
    • Park, J.H., Lee, H.I., Tae, H.S., Huh, J.S., and Lee, J.H.: ' Lateral field emission diodes using SIMOX wafer ', IEEE Trans. Electron Devices, 1997, 44, p. 1018-1021 10.1109/16.585560 0018-9383
    • (1997) IEEE Trans. Electron Devices , vol.44 , pp. 1018-1021
    • Park, J.H.1    Lee, H.I.2    Tae, H.S.3    Huh, J.S.4    Lee, J.H.5
  • 6
    • 0033704815 scopus 로고    scopus 로고
    • Lateral silicon field emission devices using electron beam lithography
    • 10.1143/JJAP.39.2556 0021-4922
    • Shin, H., Yang, S., Hwang, T., Han, S., Lee, J., and Lee, Y.D.: ' Lateral silicon field emission devices using electron beam lithography ', Jpn. J. Appl. Phys., 2000, 39, p. 2556-2559 10.1143/JJAP.39.2556 0021-4922
    • (2000) Jpn. J. Appl. Phys. , vol.39 , pp. 2556-2559
    • Shin, H.1    Yang, S.2    Hwang, T.3    Han, S.4    Lee, J.5    Lee, Y.D.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.