Lateral silicon field-emission devices using electron beam lithography

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 5 A, 2000, Pages 2556-2559

  Han, Sangyeon ^a   Yang, Sun A ^a,d   Hwang, Taekeun ^a,e   Lee, Jongho ^b   Lee, Jong Duk ^c   Shin, Hyungcheol ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Wonkwang University   (South Korea)

^c Seoul National University   (South Korea)

^d Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^e Hyundai Microelectronics Co   (South Korea)

Author keywords

E beam lithography; Field emission device; Reactive ion etching; Silicon on insulator; Ultra high vacuum(UHV)

Indexed keywords

ANODES; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON BEAM LITHOGRAPHY; ELECTRON EMISSION; MICROELECTRONICS; REACTIVE ION ETCHING; SEMICONDUCTOR DIODES; SILICON ON INSULATOR TECHNOLOGY; TRIODES;

FIELD EMISSION DEVICES; FOWLER-NORDHEIM PLOTS;

FIELD EMISSION CATHODES;

EID: 0033704815     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.2556     Document Type: Article

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