Incompatibility of standard III-V compound semiconductor processing techniques with terbium-doped InGaAs of high terbium concentration

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 30, Issue 3, 2012, Pages

  Ramu, Ashok T ^a   Clinger, Laura E ^b   Dongmo, Pernell B ^b   Imamura, Jeffrey T ^a   Zide, Joshua M O ^b   Bowers, John E ^a  

^a University of California   (United States)

^b UNIVERSITY OF DELAWARE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE MATERIAL; BULK SEMICONDUCTORS; CONTROLLED CONDITIONS; DEVELOPING SOLUTIONS; FIGURES OF MERITS; HALL EFFECT MEASUREMENT; HALL VOLTAGE; III-V COMPOUND SEMICONDUCTOR; INP SUBSTRATES; THERMOELECTRIC MATERIAL; ULTRAVIOLET IRRADIATIONS; WET CHEMICAL PROCESSING;

ATOMS; CHEMICAL INDUSTRY; HALL EFFECT; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; PHOTORESISTS; SEMICONDUCTING INDIUM; THERMAL CONDUCTIVITY; THERMOELECTRIC EQUIPMENT;

TERBIUM;

EID: 84864191919     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3701951     Document Type: Article

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