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Volumn 324, Issue 21, 2012, Pages 3588-3592
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New materials research for high spin polarized current
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Author keywords
Heusler alloys; Thin film; Tunnel magnetoresistance effect
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Indexed keywords
CO FERRITES;
GAAS;
HEUSLER;
HEUSLER ALLOY FILMS;
HEUSLER ALLOYS;
HIGH SPINS;
MAGNETORESISTANCE RATIO;
MATERIALS RESEARCH;
MGO SUBSTRATE;
ROOM TEMPERATURE;
SPIN FILTERING;
SPIN INJECTION;
SPIN RELAXATION TIME;
STRUCTURAL AND MAGNETIC PROPERTIES;
TUNNEL MAGNETORESISTANCE;
TUNNEL MAGNETORESISTANCE EFFECTS;
TWO DIRECTIONS;
CARBON DIOXIDE;
ELECTRIC RESISTANCE;
ELECTRODES;
FERRITE;
GALLIUM ARSENIDE;
IRON COMPOUNDS;
MAGNETIC PROPERTIES;
MAGNETORESISTANCE;
SEMICONDUCTING GALLIUM;
SEMICONDUCTING SILICON;
SILICON;
SPIN POLARIZATION;
THIN FILMS;
TUNNEL JUNCTIONS;
SEMICONDUCTOR JUNCTIONS;
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EID: 84863988481
PISSN: 03048853
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jmmm.2012.02.097 Document Type: Conference Paper |
Times cited : (7)
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References (21)
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