메뉴 건너뛰기




Volumn 32, Issue 14, 2012, Pages 3753-3757

Low-temperature sintered CuIn 0.7Ga 0.3Se 2 prepared by colloidal processing

Author keywords

Centrifugal forming method; CIGS; Sintering; Sputtering target

Indexed keywords

AVERAGE GRAIN SIZE; CENTRIFUGAL FORMING METHOD; CIGS; COLLOIDAL PROCESSING; DRY PRESSING; GREEN BODY; LOW TEMPERATURES; MICROSTRUCTURE DEVELOPMENT; MONO-DISPERSED; PACKING DENSITY; PORE FORMATION; RELATIVE DENSITY; SPUTTERING TARGET;

EID: 84863877252     PISSN: 09552219     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jeurceramsoc.2012.05.031     Document Type: Article
Times cited : (11)

References (12)
  • 1
    • 60349083599 scopus 로고    scopus 로고
    • Incorporation of Ga in CIGS absorber layers formed by RF-magnetron sputtering in Se vapours
    • Salomé P.M.P., da Cunha A.F. Incorporation of Ga in CIGS absorber layers formed by RF-magnetron sputtering in Se vapours. Materials Sci Forum 2008, 323-327:587-588.
    • (2008) Materials Sci Forum , pp. 587-588
    • Salomé, P.M.P.1    da Cunha, A.F.2
  • 2
    • 84863876902 scopus 로고    scopus 로고
    • Structure and electrical properties of CIGS absorber layer deposited by single target RF sputtering process
    • Ma M.S., Shei S.C., Lee P.Y. Structure and electrical properties of CIGS absorber layer deposited by single target RF sputtering process. Conference on Optical Tech. 2011.
    • (2011) Conference on Optical Tech.
    • Ma, M.S.1    Shei, S.C.2    Lee, P.Y.3
  • 3
    • 74049120892 scopus 로고    scopus 로고
    • Direct liquid coating of chalcopyrite light-absorbing layers for photovoltaic devices
    • Todorov T., Mitzi D.B. Direct liquid coating of chalcopyrite light-absorbing layers for photovoltaic devices. Eur J Inorg Chem 2010, 17-28.
    • (2010) Eur J Inorg Chem , pp. 17-28
    • Todorov, T.1    Mitzi, D.B.2
  • 6
    • 70749132809 scopus 로고    scopus 로고
    • An investigation on preparation of CIGS targets by sintering process
    • Zhuang N., Chuang D.M., Zhang G. An investigation on preparation of CIGS targets by sintering process. Mater Sci Eng B 2010, 166:34-40.
    • (2010) Mater Sci Eng B , vol.166 , pp. 34-40
    • Zhuang, N.1    Chuang, D.M.2    Zhang, G.3
  • 9
    • 0029632834 scopus 로고
    • Vacuum sublimation of GaSe: a molecular source for deposition of GaSe
    • Ludviksson A., Rumaner L.E., Rogers J.W., Ohuchi F.S. Vacuum sublimation of GaSe: a molecular source for deposition of GaSe. Cryst Growth 1995, 151:114-120.
    • (1995) Cryst Growth , vol.151 , pp. 114-120
    • Ludviksson, A.1    Rumaner, L.E.2    Rogers, J.W.3    Ohuchi, F.S.4
  • 10
    • 0026157794 scopus 로고
    • 2 and its impact on material and device performance
    • 2 and its impact on material and device performance. Sol Cells 1991, 30:21-38.
    • (1991) Sol Cells , vol.30 , pp. 21-38
    • Tuttle, J.R.1    Albin, D.S.2    Noufi, R.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.