Growth mechanism of thermally processed Cu(In,Ga)S 2 precursors for printed Cu(In,Ga)(S,Se) 2 solar cells

Physica Status Solidi - Rapid Research Letters

Volumn 6, Issue 7, 2012, Pages 297-299

  Klugius, Ines ^a   Miller, Rebekah ^b   Quintilla, Aina ^a   Friedlmeier, Theresa M ^a   Blázquez Sánchez, David ^a   Ahlswede, Erik ^a   Powalla, Michael ^a  

^a ZENTRUM FÜR SONNENENERGIE UND WASSERSTOFF FORSCHUNG BADEN WÜRTTEMBERG ZSW   (Germany)

^b EMD Millipore   (United States)

Author keywords

Deposition under ambient conditions; Nanocrystals; Rapid thermal annealing; Selenisation; Solar cells

Indexed keywords

AMBIENT CONDITIONS; CARBON RICH; CONVENTIONAL METHODS; CRACK FREE; CU(IN , GA)SE; CU(IN ,GA)(S ,SE)2; CU(IN ,GA)S; ELEMENTAL SELENIUM; GROWTH MECHANISMS; HIGH THROUGHPUT; PHASE DEVELOPMENT; POLYCRYSTALLINE; PRECURSOR FILMS; RAMAN MEASUREMENTS; REACTION CHAMBERS; SELENISATION; SOLAR CELL PARAMETERS; TARGET TEMPERATURE; THERMAL ANNEALING SYSTEM; UNDERLAYERS; VAPOUR PRESSURES; XRD;

CONVERSION EFFICIENCY; GALLIUM; NANOCRYSTALS; RAPID THERMAL ANNEALING; SELENIUM; SOLAR CELLS; VAPORS;

COPPER;

EID: 84863876831     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.201206191     Document Type: Article

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