Insulator at the Ultrathin Limit: MgO on Ag(001)

Physical Review Letters

Volumn 87, Issue 27, 2001, Pages 276801-276801-4

  Schintke, Silvia ^a   Messerli, Stéphane ^a   Pivetta, Marina ^a   Patthey, François ^a   Libioulle, Laurent ^a   Stengel, Massimiliano ^b   De Vita, Alessandro ^b,c   Schneider, Wolf Dieter ^a  

^a UNIVERSITY OF LAUSANNE   (Switzerland)

^b INSTITUT ROMAND DE RECHERCHE NUMÉRIQUE EN PHYSIQUE DES MATÉRIAUX IRRMA   (Switzerland)

^c UNIVERSITY OF TRIESTE   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84863646434     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.87.276801     Document Type: Article

References (40)

1. J. S. Moodera: Annu. Rev. Mater. Sci., 29, 381–432 (1999).
2. V. E. Henrich, Rep. Prog. Phys., 48, 1481–1541 (1985).
3. V. E. Henrich and P. A. Cox, in The Surface Science of Metal Oxides (Cambridge University Press, Cambridge, U.K.,1994).
4. M. Bäumer, in Chemisorption and Reactivity on Supported Clusters, R. M. Lambert and G. Pacchioni (Kluwer Academic Publishers, Dordrecht,1997).
5. C. Xu and D. W. Goodman, in Handbook of Heterogeneous Catalysis, G. Ertl, H. Knözinger, and J. Weitkamp (VCH, Weinheim,1997), ISBN 3-527-29218-8.
6. M. C. Gallagher: Surf. Sci., 339, L909 (1995).
7. A. P. Alivisatos, Science, 271, 933 (1996).
8. W. Hebenstreit: Surf. Sci. Lett., 424, L321 (1999).
9. I. Sebastian: Faraday Discuss., 144, 129 (1999).
10. J. Viernow: Phys. Rev. B, 59, 10 356 (1999).
11. R. Gaisch: Ultramicroscopy, 42–44, 1621 (1992).
12. J. Wollschläger: Appl. Surf. Sci., 142, 129 (1999).
13. J. Tersoff and D. R. Hamann, Phys. Rev. B, 31, 805 (1985).
14. R. M. Feenstra and P. Mårtensson, Phys. Rev. Lett., 61, 447 (1988).
15. P. Martensson and R. M. Feenstra, Phys. Rev. B, 39, 7744 (1989).
16. W. J. Kaiser and R. C. Jaklevic, Surf. Sci., 181, 55 (1987).
17. M.-H. Schaffner: Surf. Sci., 417, 159 (1998).
18. J. Li: Phys. Rev. Lett., 76, 1888 (1996).
19. U. Heiz and W.-D. Schneider, J. Phys. D, 33, R85 (2000).
20. S. Altieri: Phys. Rev. B, 61, 16 948 (2000).
21. A. L. Shluger: Phys. Rev. B, 59, 2417 (1999).
22. L. H. Tjeng: Surf. Sci., 235, 269 (1990).
23. V. E. Henrich: Phys. Rev. B, 22, 4764 (1980).
24. P. A. Cox and A. A. Williams, Surf. Sci., 175, L782 (1986).
25. M.-C. Wu: J. Vac. Sci. Technol. A, 10, 1467 (1992).
26. U. Schönberger and F. Aryasetiawan, Phys. Rev. B, 52, 8788 (1995).
27. J. P. LaFemina and C. B. Duke, J. Vac. Sci. Technol. A, 9, 1847 (1991).
28. S. Schuppler: Appl. Phys. A, 51, 322 (1990).
29. G. Binnig: Phys. Rev. Lett., 55, 991 (1985).
30. T. Jung: Phys. Rev. Lett., 74, 1641 (1995).
31. R. Chau, in Proceedings of IEEE International Electron Devices Meeting IEDM, 2000 (http://www.intel.com/research/silicon/ieee/ieee6.htm).
32. G. A. Prinz, J. Magn. Magn. Mater., 200, 57 (1999).
33. M. McEllistrem: Phys. Rev. Lett., 70, 2471 (1993).
34. U. Schönberger: Acta Metall. Mater., 40, 1–10 (1992).
35. C. Li: Phys. Rev. B, 48, 8317 (1993).
36. E. Heifets: J. Phys. Condens. Matter, 8, 6577 (1996).
37. N. Troullier and J. L. Martins, Phys. Rev. B, 43, 1993 (1991).
38. M. Fuchs and M. Scheffler, Comput. Phys. Commun., 119, 67 (1999).
39. J. P. Perdew: Phys. Rev. Lett., 77, 3865 (1996).
40. W. Pickett, Comments Solid State Phys., 12, 57 (1986), and references therein.